IEICE Technical Committee

Electronics-Silicon Devices and Materials(Date:2010/06/15)

Presentation

表紙

[Date]2010/6/15
[Paper #]

A Compact Model of Si Nanowire MOSFETs : Ballistic and Quasi-Ballistic Transport

Kenji NATORI,

[Date]2010/6/15
[Paper #]SDM2010-33

Development of Silicon Nanowire MOSFETs through Atomic-Scale Design Concepts

Shinji MIGITA, Yukinori MORITA, Hiroyuki OTA,

[Date]2010/6/15
[Paper #]SDM2010-34

An Analysis of Effective Carrier Mobility of Silicon Nanowire FET

Soshi SATO, Kuniyuki KAKUSHIMA, Parhat AHMET, Kenji OHMORI, Kenji NATORI, Hiroshi IWAI, Keisaku YAMADA,

[Date]2010/6/15
[Paper #]SDM2010-35

Nickel silicide Encroachment in Silicon Nanowire and its Suppression

Naoto Shigemori, Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai,

[Date]2010/6/15
[Paper #]SDM2010-36

Schottky-barrier modulation by segregation layers at metal/Si interfaces : first-principles study on chemical trend

Kyosuke KOBINATA, Yusuke MARUTA, Takashi Nakayama,

[Date]2010/6/15
[Paper #]SDM2010-37

Characterization of Chemical Bonding Features and Electrical properties of Ge MIS and Ge/Metal Structures

Tomohiro Fujioka, Tatsuya Bando, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki,

[Date]2010/6/15
[Paper #]SDM2010-38

Molecular Orbital Analysis of Stability of Ge(100) Surface Terminated by Various Atoms

DongHun LEE, Takeshi KANASHIMA, Masanori OKUYAMA,

[Date]2010/6/15
[Paper #]SDM2010-39

The Crystalline Structures and Electrical Properties of PrAlO formed by Atomic Layer Deposition

Kazuya FURUTA, Wakana TAKEUCHI, Mitsuo SAKASHITA, Hiroki KONDO, Osamu NAKATSUKA, Shigeaki ZAIMA,

[Date]2010/6/15
[Paper #]SDM2010-40

High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5nm

Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Ahmet Parhat, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai,

[Date]2010/6/15
[Paper #]SDM2010-41

Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces

Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Tatsuro Maeda, Hisashi Yamada, Noboru Fukuhara, Akihiro Ohtake, Takuya Hoshii, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi,

[Date]2010/6/15
[Paper #]SDM2010-42

Control of GeO_2 Properties and Improvement of Ge/GeO_2 Interface Characteristics Based on Understanding of GeO_2/Ge Interface Reaction

Koji KITA, Sheng WANG, Hyun LEE, Mahoro YOSHIDA, Tomonori NISHIMURA, Kosuke NAGASHIO, Akira TORIUMI,

[Date]2010/6/15
[Paper #]SDM2010-43

70% Read Margin Enhancement by V_	Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection

Kousuke MIYAJI, Shuhei TANAKAMARU, Kentaro HONDA, Shinji MIYANO, Ken TAKEUCHI,

[Date]2010/6/15
[Paper #]SDM2010-44

Study of pattern area reduction for System LSI with SGT and stacked SGT

Takahiro KODAMA, Shigeyoshi WATANABE,

[Date]2010/6/15
[Paper #]SDM2010-45

Study of stacked NOR type MRAM for universal memory

Shouto TAMAI, Shigeyoshi WATANABE,

[Date]2010/6/15
[Paper #]SDM2010-46

The influence of Y incorporation into TiO_2 on Electronic States and Resistive Switching Characteristics

Akio Ohta, Yuta Goto, Mohd Fairuz Kazalman, Goubin Wei, Hideki Murakami,

[Date]2010/6/15
[Paper #]SDM2010-47

Resistive Memory utilizing Ferritin Protein with Nano particle : Control of a Current Path using Metal Nano Particle