Electronics-Silicon Devices and Materials(Date:2010/01/22)

Presentation
表紙

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[Date]2010/1/22
[Paper #]
目次

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[Date]2010/1/22
[Paper #]
Correlation between Low-Field Mobility and High-Field Carrier Velocity in Quasi-Ballistic-Transport MISFETs scaled down to L_g=30 nm

Ksuke Tatsumua,  Masakazu Goto,  Shigeru Kawanaka,  Atsuhiro Kinoshita,  

[Date]2010/1/22
[Paper #]SDM2009-171
Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field

Tsunaki TAKAHASHI,  Gento YAMAHATA,  Jun OGI,  Tetsuo KODERA,  Shunri ODA,  Ken UCHIDA,  

[Date]2010/1/22
[Paper #]SDM2009-172
Universal Mobility Modeling and its Application to Interface Engineering for Highly Scaled MOSFETs Based on First-principles Calculation

Takamitsu ISHIHARA,  Daisuke MATSUSHITA,  Koichi KATO,  

[Date]2010/1/22
[Paper #]SDM2009-173
Record-high Electron Mobility in Ge n-MOSFETs exceeding Si Universality

Choong Hyun LEE,  Tomonori NISHIMURA,  Kosuke NAGASHIO,  Koji KITA,  Akira TORIUMI,  

[Date]2010/1/22
[Paper #]SDM2009-174
Three-Dimensional Integration Technology Based on Reconfigured Wafer-to-Wafer and Multichip-to-Wafer Stacking Using Self-Assembly Method

Takafumi FUKUSHIMA,  Kang-Wook LEE,  Tetsu TANAKA,  Mitsumasa KOYANAGI,  

[Date]2010/1/22
[Paper #]SDM2009-175
3D Heterogeneous Opto-Electronic Integration Technology for System-on-Silicon

Kangwook LEE,  Akihiro NORIKI,  Kouji KIYOYAMA,  Takafumi FUKUSHIMA,  Tetsu TANAKA,  Mitsumasa KOYANAGI,  

[Date]2010/1/22
[Paper #]SDM2009-176
New Analysis Methods for Comprehensive Understanding of Random Telegraph Noise

Toshiharu NAGUMO,  Kiyoshi TAKEUCHI,  Shinji YOKOGAWA,  Kiyotaka IMAI,  Yoshihiro HAYASHI,  

[Date]2010/1/22
[Paper #]SDM2009-177
Insight into the S/D Engineering by High-resolution Imaging and Precise Probing of 2D-Carrier Profiles with SSRM

Zhang Li,  Masumi Saitoh,  Atsuhiro Kinoshita,  Nobuaki Yasutake,  Akira Hokazono,  Nobutoshi Aoki,  Naoki Kusunoki,  Ichiro Mizushima,  Mitsuo Koike,  Shiro Takeno,  Junji Koga,  

[Date]2010/1/22
[Paper #]SDM2009-178
Development of Compact Model Based on Layout Dependence Consideration

Hisashi AIKAWA,  Tomoya SANUKI,  Akio SAKATA,  Eiji Morifuji,  Hisao YOSHIMURA,  Tetsuya ASAMI,  Hiroshi OTANI,  Hisato OYAMATSU,  

[Date]2010/1/22
[Paper #]SDM2009-179
A 0.5V Operation, 32% Lower Active Poser, 42% Lower Leakage Current, Ferroelectric 6T-SRAM with V_ Self-Adjusting Function for 60% Larger Static Noise Margin

Shuhei TANAKAMARU,  Teruyoshi HATANAKA,  Ryoji YAJIMA,  Mitsue TAKAHASHI,  Shigeki SAKAI,  Ken TAKEUCHI,  

[Date]2010/1/22
[Paper #]SDM2009-180
Importance of the graphene/metal contact : Analysis of intrinsic mobility & contact resistance

Kosuke NAGASHIO,  Tomonori NISHIMURA,  Koji KITA,  Akira TORIUMI,  

[Date]2010/1/22
[Paper #]SDM2009-181
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[Date]2010/1/22
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[Date]2010/1/22
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