Electronics-Silicon Devices and Materials(Date:2009/11/05)

Presentation
表紙

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[Date]2009/11/5
[Paper #]
目次

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[Date]2009/11/5
[Paper #]
Compact MOSFET Model and Its Perspective : from bulk-MOSFETs to MG-MOSFETs

Mitiko Miura-Mattausch,  Masataka Miyake,  Ko Johguchi,  Shunta Kusu,  Kenta Ishimura,  Hideyuki Kikuchihara,  Uwe Feldmann,  Hans Juergen Mattausch,  

[Date]2009/11/5
[Paper #]SDM2009-135
2009 SISPAD Review

Katsuhiko TANAKA,  

[Date]2009/11/5
[Paper #]SDM2009-136
Report on 2009SISPAD (2)

Matsuto OGAWA,  

[Date]2009/11/5
[Paper #]SDM2009-137
Surface-Potential-Based Drain Current Model for Thin-Film Transistors

Hiroshi TSUJI,  Yoshinari KAMAKURA,  Kenji TANIGUCHI,  

[Date]2009/11/5
[Paper #]SDM2009-138
HiSIM-IGBT : A Compact IGBT Model for Circuit Simulation

Masataka MIYAKE,  Hiroki MASUOKA,  Uwe FELDMANN,  Mitiko MIURA-MATTAUSCH,  

[Date]2009/11/5
[Paper #]SDM2009-139
Development of MEMS Equivalent Circuit Generator

Nobuyo FUJIWARA,  Kazuo ASAUMI,  Tomoyuki KOIKE,  Toshiyuki TSUCHIYA,  Gen HASHIGUCHI,  

[Date]2009/11/5
[Paper #]SDM2009-140
Device Modeling and Simulation for CMOS Biosensor Applications

Shigeyasu UNO,  Kazuo NAKAZATO,  

[Date]2009/11/5
[Paper #]SDM2009-141
Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Transistors

Yoshinari KAMAKURA,  Nobuya MORI,  Kenji TANIGUCHI,  

[Date]2009/11/5
[Paper #]SDM2009-142
R-matrix method for quantum transport simulation in atomistic modeling

Gennady MIL'NIKOV,  Nobuya MORI,  Yoshinari KAMAKURA,  

[Date]2009/11/5
[Paper #]SDM2009-143
Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation

Hiroshi Takeda,  Michihito Kawada,  Kiyoshi Takeuchi,  Masami Hane,  

[Date]2009/11/5
[Paper #]SDM2009-144
A Novel Monte Carlo Simulation to Evaluate the Size Effect of Resistivity for Scaled Metallic Interconnects

Takashi KURUSU,  Makoto WADA,  Noriaki MATSUNAGA,  Akihiro KAJITA,  Hiroyoshi TANIMOTO,  Nobutoshi AOKI,  Yoshiaki TOYOSHIMA,  Hideki SHIBATA,  

[Date]2009/11/5
[Paper #]SDM2009-145
Possible Performance of SOI Devices, their Potentiality and Prospects : Past Constraint and Current Issues

Yasuhisa OMURA,  

[Date]2009/11/5
[Paper #]SDM2009-146
Random Fluctuations in Scaled MOS Devices

Kiyoshi TAKEUCHI,  Akio NISHIDA,  Toshiro HIRAMOTO,  

[Date]2009/11/5
[Paper #]SDM2009-147
A Discrete Surface Potential Model which Accurately Reflects Channel Doping Profile and its Application to Ultra-Fast Analysis of Random Dopant Fluctuation

Hironori SAKAMOTO,  Hiroshi ARIMOTO,  Hiroo MASUDA,  Satoshi FUNAYAMA,  Shigetaka KUMASHIRO,  

[Date]2009/11/5
[Paper #]SDM2009-148
Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface

Ken Suzuki,  Yuta Ito,  Tatsuya Inoue,  Hideo Miura,  Hideki Yoshikawa,  Keisuke Kobayashi,  Seiji Samukawa,  

[Date]2009/11/5
[Paper #]SDM2009-149
Trial application of tight-binding method to Si-cluster surrounded by SiO2 in optimized atomistic network

Kenji Kawabata,  Takashi Ichikawa,  Hiroshi Watanabe,  

[Date]2009/11/5
[Paper #]SDM2009-150
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[Date]2009/11/5
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[Date]2009/11/5
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