Electronics-Silicon Devices and Materials(Date:2009/06/12)

Presentation
表紙

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[Date]2009/6/12
[Paper #]
目次

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[Date]2009/6/12
[Paper #]
Materials Properties of Germanium-Comparison with Silicon

Kohei M. ITOH,  

[Date]2009/6/12
[Paper #]SDM2009-26
Atomistic Modeling of GeO_2/Ge Interface Structure by Molecular Dynamics : Comparison with SiO_2/Si Interface

Takanobu WATANABE,  Tomoya ONDA,  Ryo TOSAKA,  Hideaki YAMAMOTO,  

[Date]2009/6/12
[Paper #]SDM2009-27
First-Principles Calculations for Interfacial Reaction during Si Oxidation

Toru AKIYAMA,  Hiroyuki KAGESHIMA,  Masashi UEMATSU,  Tomonori ITO,  

[Date]2009/6/12
[Paper #]SDM2009-28
Fundamental Study on GeO_2/Ge Interface and its Electrical Properties

Heiji WATANABE,  Marina SAITO,  Shoichiro SAITO,  Gaku OKAMOTO,  Katsuhiro KUTSUKI,  Takuji HOSOI,  Tomoya ONO,  Takayoshi SHIMURA,  

[Date]2009/6/12
[Paper #]SDM2009-29
Electrical Properties of Ge MIS Interface Defects

Noriyuki Taoka,  Wataru Mizubayashi,  Yukinori Morita,  Shinji Migita,  Hiroyuki Ota,  Shinich Takagi,  

[Date]2009/6/12
[Paper #]SDM2009-30
Thermal Stability of Ge MOS Devices : Influence of Ge monoxide [GeO(II)] on Ge oxygen [GeO(g)] desorption

Yoshiki KAMATA,  Akira TAKASHIMA,  TSUTOMU Tezuka,  

[Date]2009/6/12
[Paper #]SDM2009-31
Fermi Level Pinning at Metal/Germanium Interface and Its Controllability

Tomonori NISHIMURA,  Kosuke NAGASHIO,  Koji KITA,  Akira TORIUMI,  

[Date]2009/6/12
[Paper #]SDM2009-32
Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation

Kimihiko KATO,  Hiroki KONDO,  Mitsuo SAKASHITA,  Shigeaki ZAIMA,  

[Date]2009/6/12
[Paper #]SDM2009-33
Improvement of electrical characteristics of HfO_2/Ge MIS structure treated by fluorine gas and nitrogen radical

Hideto IMAJO,  Hyun LEE,  Dong-Hun LEE,  Yuichi YOSHIOKA,  Takeshi KANASHIMA,  Masanori OKUYAMA,  

[Date]2009/6/12
[Paper #]SDM2009-34
Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO_2 Interlayers : Formation of Insulator on Ge Substrate

Hiroshi NAKASHIMA,  Kana HIRAYAMA,  Haigui YANG,  Dong WANG,  

[Date]2009/6/12
[Paper #]SDM2009-35
Photoemission Study of Suboxides on GeO_2/Ge Structure Formed by Thermal and Low Temperature Processes

Hideki MURAKAMI,  Yoshikazu ONO,  Akio OHTA,  Seiichiro HIGASHI,  Seiichi MIYAZAKI,  

[Date]2009/6/12
[Paper #]SDM2009-36
Effect of ALD-Al_2O_3 Layer on Interfacial Reaction between LaAlO and Ge

Mitsuo SAKASHITA,  Ryosuke KATO,  Shinya KYOGOKU,  Hiroki KONDO,  Shigeaki ZAIMA,  

[Date]2009/6/12
[Paper #]SDM2009-37
Investigation of Al_2O_3 Diffusion Annealing Process for Low V_t pMISFET with Al_2O_3-Capped HfO_2 Dielectrics

Tetsu Morooka,  Takeo Matsuki,  Nobuyuki Mise,  Satoshi Kamiyama,  Toshihide Nabatame,  Takahisa Eimori,  Yasuo Nara,  Jiro Yugami,  Kazuto Ikeda,  Yuzuru Ohji,  

[Date]2009/6/12
[Paper #]SDM2009-38
Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO_2 stack by La or Al addition

Kosuke Tatsumura,  Takamitsu Ishihara,  Seiji Inumiya,  Kazuaki Nakajima,  Akio Kaneko,  Masakazu Goto,  Shigeru Kawanaka,  Atsuhiro Kinoshita,  

[Date]2009/6/12
[Paper #]SDM2009-39
Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric

Kosuke Ohara,  Ichiro Yamashita,  Toshitake Yaegashi,  Masahiro Moniwa,  Masaki Yoshimaru,  Yukiharu Uraoka,  

[Date]2009/6/12
[Paper #]SDM2009-40
Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)_3

Hiroki KONDO,  Kazuya FURUTA,  Hirotaka MATSUI,  Mitsuo SAKASHITA,  Shigeaki ZAIMA,  

[Date]2009/6/12
[Paper #]SDM2009-41
Characterization of La Diffusion into HfO_2/SiO_2 Stacked Layers from Ultrathin LaO_x

Akio OHTA,  Daisuke KANME,  Seiichiro HIGASHI,  Seiichi MIYAZAKI,  

[Date]2009/6/12
[Paper #]SDM2009-42
ドープした金属シリサイドの電子構造に関する理論的検討(ショートプレゼンテーション,ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)

Shinichi Sotome,  Takashi Nakayama,  

[Date]2009/6/12
[Paper #]SDM2009-43
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