Electronics-Silicon Devices and Materials(Date:2008/11/28)

Presentation
表紙

,  

[Date]2008/11/28
[Paper #]
目次

,  

[Date]2008/11/28
[Paper #]
Effects of annealing on the structures and electrical characteristics of NiO thin films for ReRAM

Yusuke NISHI,  Tsunenobu KIMOTO,  

[Date]2008/11/28
[Paper #]SDM2008-184
Research for Simplifying Structures of Si X-ray Detectors (Silicon Drift Detector) and Improving Sensitivity of High-Energy X-rays

Hideharu MATSUURA,  Miyuki TAKAHASHI,  Kazunori KOHARA,  Kazuyo YAMAMOTO,  Taketoshi MAEDA,  Yoshitaka KAGAWA,  

[Date]2008/11/28
[Paper #]SDM2008-185
Low-damage high-rate sputtering of silicon induced by ethanol cluster ion beam

Hiromichi RYUTO,  Ryosuke OZAKI,  Gikan H. TAKAOKA,  

[Date]2008/11/28
[Paper #]SDM2008-186
Si atom movement in a-Si film by soft X-ray excitation using undulators source

Yasuyuki TAKANASHI,  Akira HEYA,  Naoto MATSUO,  Kazuhiro KANDA,  

[Date]2008/11/28
[Paper #]SDM2008-187
Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks

Heiji WATANABE,  Yuki KITA,  Takuji HOSOI,  Takayoshi SHIMURA,  Kenji SHIRAISHI,  Yasuo NARA,  Keisaku YAMADA,  

[Date]2008/11/28
[Paper #]SDM2008-188
Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxides

Hiroyuki IRIFUNE,  Hiroshi YANO,  Yukiharu URAOKA,  Takashi FUYUKI,  Ichiro YAMASHITA,  

[Date]2008/11/28
[Paper #]SDM2008-189
Electrical properties of 4H-SiC MOS devices fabricated on C-face with NO direct oxidation

Yuki OSHIRO,  Dai OKAMOTO,  Hiroshi YANO,  Tomoaki HATAYAMA,  Yukiharu URAOKA,  Takashi FUYUKI,  

[Date]2008/11/28
[Paper #]SDM2008-190
Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure

Yuichiro NANEN,  Hironori YOSHIOKA,  Masato NOBORIO,  Jun SUDA,  Tsunenobu KIMOTO,  

[Date]2008/11/28
[Paper #]SDM2008-191
Electrical Properties of Ferroelectric Thin Films by Alcohol Rerated Materials

Masaki YAMAGUCHI,  Tomohiro OBA,  Yoichiro MASUDA,  

[Date]2008/11/28
[Paper #]SDM2008-192
Change in electrical properties of SiO_2/Si interface as well as Si caused by Ultraviolet light and plasma irradiations

M. Takiuchi,  T. Sameshima,  

[Date]2008/11/28
[Paper #]SDM2008-193
Amorphization of Germanium by Ion Implantatin for Shallow Junction Formation

Kosei OSADA,  Kentaro SHIBAHARA,  

[Date]2008/11/28
[Paper #]SDM2008-194
Electrical characterization of HfO_2/Ge MIS structure treated by fluorine gas

Hideto IMAJO,  Hyun LEE,  Yuichi YOSHIOKA,  Takeshi KANASHIMA,  Masanori OKUYAMA,  

[Date]2008/11/28
[Paper #]SDM2008-195
複写される方へ

,  

[Date]2008/11/28
[Paper #]
Notice for Photocopying

,  

[Date]2008/11/28
[Paper #]
奥付

,  

[Date]2008/11/28
[Paper #]