Electronics-Silicon Devices and Materials(Date:2008/11/06)

Presentation
表紙

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[Date]2008/11/6
[Paper #]
目次

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[Date]2008/11/6
[Paper #]
Circuit designs of Analog Circuits in Advanced System LSIs

Shiro Dosho,  Shiro Sakiyama,  Takashi Morie,  Kazuo Matsukawa,  

[Date]2008/11/6
[Paper #]SDM2008-169
Circuit Design and Device Modeling for Millimeter-Wave CMOS Applications

Minoru Fujishima,  

[Date]2008/11/6
[Paper #]SDM2008-170
A 13.75ns fast holographic reconfiguration

Mao NAKAJIMA,  Minoru WATANABE,  

[Date]2008/11/6
[Paper #]SDM2008-171
Fault tolerance of the holographic memory in the large scale opptically reconfigurable gate array

Daisaku SETO,  Minoru WATANABE,  

[Date]2008/11/6
[Paper #]SDM2008-172
A 3D simulator for designing next generation semiconductor devices, Part 1 : Development of a strongly stable simulator

Shogo Sakurai,  Riming Zhu,  Masahiro Sato,  Ken Yamaguchi,  

[Date]2008/11/6
[Paper #]SDM2008-173
A 3D simulator for designing next generation semiconductor devices, Part 2 : Quick generators of 3D structures and high-quality meshes

Riming Zhu,  Masahiro Sato,  Shogo Sakurai,  Ken Yamaguchi,  

[Date]2008/11/6
[Paper #]SDM2008-174
A Discretization Method of Quantum Drift-Diffusion Model for Time-Dependent Device Simulations

Tomoko SHIMADA,  Shinji ODANAKA,  

[Date]2008/11/6
[Paper #]SDM2008-175
Impact of Non-parabolic Band on Threshold Voltage Shift of Nano-sacle SOI MOSFET : Proposal of Model and Examination of its Availability

Daisuke KYOKANE,  Yasuhisa OMURA,  

[Date]2008/11/6
[Paper #]SDM2008-176
LDMOS Device Modeling and Circuit Design : Device Modeling for Circuit Design

Hirobumi Watanabe,  Takaaki Negoro,  

[Date]2008/11/6
[Paper #]SDM2008-177
Robust Design of Embedded SRAM on Deep-submicron Technology

Koji NII,  Makoto YABUUCHI,  Yasumasa TSUKAMOTO,  Shigeki OHBAYASHI,  Hirofumi SHINOHARA,  

[Date]2008/11/6
[Paper #]SDM2008-178
A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors

Yoshinari KAMAKURA,  Gennady MIL'NIKOV,  Nobuya MORI,  Tatsuya EZAKI,  

[Date]2008/11/6
[Paper #]SDM2008-179
Three-dimensional NEGF simulation of gate tunnel current in ultra-small MOSFETs

Hideki MINARI,  Daisuke NISHITANI,  Nobuya MORI,  

[Date]2008/11/6
[Paper #]SDM2008-180
High-field Transport in Silicon Analyzed by Flux Equation

Naohito MOROZUMI,  Kenji NATORI,  

[Date]2008/11/6
[Paper #]SDM2008-181
Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors

Yoshihiro YAMADA,  Hideaki TSUCHIYA,  Matsuto OGAWA,  

[Date]2008/11/6
[Paper #]SDM2008-182
First-Principles Simulation of Electronic Bandstructures of Nanoscaled-Si Channels with Strain Effects

Tadashi MAEGAWA,  Tsuneki YAMAUCHI,  Takeshi HARA,  Hideaki TSUCHIYA,  Matsuto OGAWA,  

[Date]2008/11/6
[Paper #]SDM2008-183
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[Date]2008/11/6
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[Date]2008/11/6
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[Date]2008/11/6
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