エレクトロニクス-シリコン材料・デバイス(開催日：2008/07/02)

タイトル/著者/発表日/資料番号
表紙

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[発表日]2008/7/2
[資料番号]
目次

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[発表日]2008/7/2
[資料番号]
III-V Semiconductor Epitaxial Nanowires and Their Applications(Plenary Session)

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[発表日]2008/7/2
[資料番号]ED2008-39,SDM2008-58
Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)

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[発表日]2008/7/2
[資料番号]ED2008-40,SDM2008-59
AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)

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[発表日]2008/7/2
[資料番号]ED2008-41,SDM2008-60
Properties of GaN MIS capacitors using Al_2O_3 as gate dielectric deposited by Remote Plasma Atomic Layer Deposition(Session1: Compound Semiconductor Devices)

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[発表日]2008/7/2
[資料番号]ED2008-42,SDM2008-61
Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)

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[発表日]2008/7/2
[資料番号]ED2008-43,SDM2008-62
Precise Ion Implantation for Advanced MOS LSIs(Session2: Silicon Devices I)

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[発表日]2008/7/2
[資料番号]ED2008-44,SDM2008-63
Quantum Modeling of Carrier Transport through Silicon Nano-devices(Session2: Silicon Devices I)

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[発表日]2008/7/2
[資料番号]ED2008-45,SDM2008-64
High-K Dielectrics for Charge Trap-type Flash Memory Application(Session2: Silicon Devices I)

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[発表日]2008/7/2
[資料番号]ED2008-46,SDM2008-65
Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50nm DRAM Cell Transistors(Session2: Silicon Devices I)

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[発表日]2008/7/2
[資料番号]ED2008-47,SDM2008-66
A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)

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[発表日]2008/7/2
[資料番号]ED2008-48,SDM2008-67
Characterization of Carbon Nanotube FETs by Electrostatic Force Microscopy(Session3: Emerging Devices I)

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[発表日]2008/7/2
[資料番号]ED2008-49,SDM2008-68
Recent progress on nanoprobe and nanoneedle(Session3: Emerging Devices I)

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[発表日]2008/7/2
[資料番号]ED2008-50,SDM2008-69
Technical Issues and Applications of Printed Thin-Film Devices(Session3: Emerging Devices I)

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[発表日]2008/7/2
[資料番号]ED2008-51,SDM2008-70
A Ta_2O_5 Solid-electrolyte Switch with Improved Reliability(Session3: Emerging Devices I)

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[発表日]2008/7/2
[資料番号]ED2008-52,SDM2008-71
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for room temperature operation(Session3: Emerging Devices I)

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[発表日]2008/7/2
[資料番号]ED2008-53,SDM2008-72
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)

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[発表日]2008/7/2
[資料番号]ED2008-54,SDM2008-73
Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memory(Session4A: Nonvolatile Memory)

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[発表日]2008/7/2
[資料番号]ED2008-55,SDM2008-74
3-dimensional Terraced NAND (3D TNAND) Flash Memory(Session4A: Nonvolatile Memory)

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[発表日]2008/7/2
[資料番号]ED2008-56,SDM2008-75
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