Electronics-Silicon Devices and Materials(Date:2008/01/23)

Presentation
表紙

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[Date]2008/1/23
[Paper #]
目次

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[Date]2008/1/23
[Paper #]
MBE-VLS growth of GaAs nanowires on (111)Si substrate

Masahito YAMAGUCHI,  Ji-Hyun Paek,  Tatsuya NISHIWAKI,  Yutaka YOSHIDA,  Nobuhiko SAWAKI,  

[Date]2008/1/23
[Paper #]ED2007-237,SDM2007-248
Electrical characterizations of InGaAs related nanowires grown by selective-area MOVPE

Jinichiro NOBORISAKA,  Takuya SATO,  Junichi MOTOHISA,  Shinjiro HARA,  Takashi FUKUI,  

[Date]2008/1/23
[Paper #]ED2007-238,SDM2007-249
Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope

Maciej Ligowski,  Ratno Nuryadi,  Akihiro Ichiraku,  Miftahul Anwar,  Ryszard Jablonski,  Michiharu Tabe,  

[Date]2008/1/23
[Paper #]ED2007-239,SDM2007-250
Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer

Daniel MORARU,  Daisuke Nagata,  Kiyohito YOKOI,  Hiroya IKEDA,  Michiharu TABE,  

[Date]2008/1/23
[Paper #]ED2007-240,SDM2007-251
InP Ballistic Transistors

Yasuyuki MIYAMOTO,  Kazuhito FURUYA,  

[Date]2008/1/23
[Paper #]ED2007-241,SDM2007-252
Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions

Masatoshi KOYAMA,  Tatsuya INOUE,  Naoki AMANO,  Kenji FUJIWARA,  Toshihiko MAEMOTO,  Shigehiko SASA,  Masataka INOUE,  

[Date]2008/1/23
[Paper #]ED2007-242,SDM2007-253
Control of Nonlinear Characteristics in GaAs-based Three-terminal Nanowire Junction Devices and Its Application to Logic Gates

RAHMAN Shaharin Fadzli Abd,  Yuta SHIRATORI,  Seiya KASAI,  

[Date]2008/1/23
[Paper #]ED2007-243,SDM2007-254
Thermoelectric characteristics in Si nanostructures

Hiroya IKEDA,  Naomi YAMASHITA,  

[Date]2008/1/23
[Paper #]ED2007-244,SDM2007-255
Approaches to the high temperature operation of the carbon nanotube single electron transistor

Takahiro MORI,  Sunsuke SATO,  Kazuo OMURA,  Katsumi UCHIDA,  Hirofumi YAJIMA,  Koji ISHIBASHI,  

[Date]2008/1/23
[Paper #]ED2007-245,SDM2007-256
Proposal of CdTe X-ray image sensor driven by FEA with focusing electrode

Yuichiro HANAWA,  Takuya SAKATA,  Takashi SODA,  Gui HAN,  Hisashi MORII,  Katsumi MATSUBARA,  Susumu YAMASHITA,  Masayoshi NAGAO,  Seigo KANEMARU,  Yoichiro NEO,  Toru AOKI,  Hidenori MIMURA,  

[Date]2008/1/23
[Paper #]ED2007-246,SDM2007-257
Ultra-short pulse generators using resonant tunneling diodes and their integration with antenna on AlN ceramic substrates

Koichi MAEZAWA,  OOKAWA Yohei /,  Shigeru KISHIMOTO,  Takashi MIZUTANI,  Hiroya ANDOH,  Kazuhiro AKAMATSU,  Hirofumi NAKATA,  

[Date]2008/1/23
[Paper #]ED2007-247,SDM2007-258
Analysis on 4RTD Logic Circuits

Tomohiko EBATA,  Hiroki OKUYAMA,  Takao WAHO,  

[Date]2008/1/23
[Paper #]ED2007-248,SDM2007-259
Implementation of Active and Sequential Circuits on GaAs-based Nanowire Network Structures Controlled by Schottky Wrap Gates

Seiya KASAI,  Hong-Quan ZHAO,  Tamotsu HASHIZUME,  

[Date]2008/1/23
[Paper #]ED2007-249,SDM2007-260
Half adder operation based on 2-output single-electron device using a Si nanodot array

Takuya KAIZAWA,  Minkyu Jo,  Masashi ARITA,  Akira FUJIWARA,  Kenji YAMAZAKI,  Yukinori Ono,  Hiroshi INOKAWA,  Yasuo TAKAHASHI,  

[Date]2008/1/23
[Paper #]ED2007-250,SDM2007-261
Stochastic data processing based on single electrons using nano-MOSFETs : Detection and control of stochastic behavior of single electrons

Katsuhiko NISHIGUCHI,  Akira FUJIWARA,  

[Date]2008/1/23
[Paper #]ED2007-251,SDM2007-262
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[Date]2008/1/23
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[Date]2008/1/23
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[Date]2008/1/23
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