Electronics-Silicon Devices and Materials(Date:2007/10/23)

Presentation
表紙

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[Date]2007/10/23
[Paper #]
目次

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[Date]2007/10/23
[Paper #]
Simulation on the electric conduction of semiconductor with arrayed dopant

Tomohide TERUNUMA,  Takanobu WATANABE,  Takahiro SHINADDA,  Yoshinari KAMAKURA,  Kenji TANIGUCHI,  Iwao OHDOMARI,  

[Date]2007/10/23
[Paper #]VLD2007-50,SDM2007-194
Comparative Study on Drive Current of non-Si n-Channel MOSFETs based on Quantum-Corrected Monte Carlo Simulation

Takashi MORI,  Yusuke AZUMA,  Hideaki TSUCHIYA,  

[Date]2007/10/23
[Paper #]VLD2007-51,SDM2007-195
Coarse-Grain Method for Quantum-Transport Simulations of Nanoscale MOSFETs

Gennady. V. MIL'NIKOV,  Nobuya MORI,  Yoshinari KAMAKURA,  Tatsuya EZAKI,  

[Date]2007/10/23
[Paper #]VLD2007-52,SDM2007-196
Crystalline Orientation Effects on Device Characteristics in Ultra-small Multi-gate Devices

Hideki MINARI,  Daisuke NISHITANI,  Nobuya MORI,  

[Date]2007/10/23
[Paper #]VLD2007-53,SDM2007-197
Device simulation on power semiconductor devices development

Ichiro Omura,  

[Date]2007/10/23
[Paper #]VLD2007-54,SDM2007-198
Electro-Thermal Compact Model for Reset Operation of Phase Change Memories

Atsushi SAKAI,  Kenichiro SONODA,  Masahiro MONIWA,  Kiyoshi ISHIKAWA,  Osamu TSUCHIYA,  Yasuo INOUE,  

[Date]2007/10/23
[Paper #]VLD2007-55,SDM2007-199
Study of Parasitic Resistance Behavior and Its Extraction Method on Deeply Scaled MOSFETs

Hideji Tsujii,  Akira Hokazono,  Makoto Fujiwara,  Shigeru Kawanaka,  Atsushi Azuma,  Nobutoshi Aoki,  Yoshiaki Toyoshima,  

[Date]2007/10/23
[Paper #]VLD2007-56,SDM2007-200
Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL

Hiroyuki TAKASHINO,  Takeshi OKAGAKI,  Tetsuya UCHIDA,  Takashi HAYASHI,  Motoaki TANIZAWA,  Eiji TSUKUDA,  Katsumi EIKYU,  Shoji WAKAHARA,  Kiyoshi ISHIKAWA,  Osamu TSUCHIYA,  Yasuo INOUE,  

[Date]2007/10/23
[Paper #]VLD2007-57,SDM2007-201
Analysis of strain-dependent hole transport characteristics in bulk Ge-pMOSFETs

Hiroshi TAKEDA,  Takeo IKEZAWA,  Michihito KAWADA,  Masami HANE,  

[Date]2007/10/23
[Paper #]VLD2007-58,SDM2007-202
Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-node pMOSFETs

Eiji TSUKUDA,  Yoshinari KAMAKURA,  Hiroyuki TAKASHINO,  Takeshi OKAGAKI,  Tetsuya UCHIDA,  Takashi HAYASHI,  Motoaki TANIZAWA,  Katsumi EIKYU,  Shoji WAKAHARA,  Kiyoshi ISHIKAWA,  Osamu TSUCHIYA,  Yasuo INOUE,  Kenji TANIGUCHI,  

[Date]2007/10/23
[Paper #]VLD2007-59,SDM2007-203
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[Date]2007/10/23
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[Date]2007/10/23
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[Date]2007/10/23
[Paper #]