Electronics-Silicon Devices and Materials(Date:2007/01/19)

Presentation
表紙

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[Date]2007/1/19
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目次

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[Date]2007/1/19
[Paper #]
A review of IEDM 2006

Kunihiro SAKAMOTO,  

[Date]2007/1/19
[Paper #]SDM2006-217
High-Performance and Low-Power CMOS Device Technologies Featuring Metal/High-k Gate Stacks with Uniaxial Strained Silicon Channels on (100) and (110) Substrates

Y. Tateshita,  J. Wang,  K. Nagano,  T. Hirano,  Y. Miyanami,  T. Ikuta,  T. Kataoka,  Y. Kikuchi,  S. Yamaguchi,  T. Ando,  K. Tai,  R. Matsumoto,  S. Fujita,  C. Yamane,  R. Yamamoto,  S. Kanda,  K. Kugimiya,  T. Kimura,  T. Ohchi,  Y. Yamamoto,  Y. Nagahama,  Y. Hagimoto,  H. Wakabayashi,  Y. Tagawa,  M. Tsukamoto,  H. Iwamoto,  M. Saito,  S. Kadomura,  N. Nagashima,  

[Date]2007/1/19
[Paper #]SDM2006-218
A 45nm High Performance Bulk Logic Platform Technology (CMOS6) using Ultra High NA (1.07) Immersion Lithography with Hybrid Dual-Damascene Structure and Porous Low-k BEOL

H. Nii,  T. Sanuki,  Y. Okayama,  K. Ota,  T. Iwamoto,  T. Fujimaki,  T. Kimura,  R. Watanabe,  T. Komoda,  A. Eiho,  K. Aikawa,  H. Yamaguchi,  R. Morimoto,  K. Ohshima,  T. Yokoyama,  T. Matsumoto,  K. Hachimine,  Y. Sogo,  S. Shino,  S. Kanai,  T. Yamazaki,  S. Takahashi,  H. Maeda,  T. Iwata,  K. Ohno,  Y. Takegawa,  A. Oishi,  M. Togo,  K. Fukasaku,  Y. Takasu,  H. Yamasaki,  H. Inokuma,  K. Matsuo,  T. Sato,  M. Nakazawa,  T. Katagiri,  K. Nakazawa,  T. Shinyama,  T. Tetsuka,  S. Fujita,  Y. Kagawa,  K. Nagaoka,  S. Muramatsu,  S. Iwasa,  S. Mimotogi,  K. Yoshida,  K. Sunouchi,  M. Iwai,  M. Saito,  M. Ikeda,  Y. Enomoto,  H. Naruse,  K. Imai,  S. Yamada,  N. Nagashima,  T. Kuwata,  F. Matsuoka,  

[Date]2007/1/19
[Paper #]SDM2006-219
Circuit Technologies for Reducing the Power of SOC and Issues on Transistor Models

Koichiro Ishibashi,  Shigeki Ohbayashi,  Katsumi Eikyu,  Motoaki Tanizawa,  Yasumasa Tsukamoto,  Kenichi Osada,  Masayuki Miyazaki,  Masanao Yamaoka,  

[Date]2007/1/19
[Paper #]SDM2006-220
High Speed Unipolar Switching Resistance RAM (RRAM) Technology

Y. Hosoi,  Y. Tamai,  T. Ohnishi,  K. Ishihara,  T. Shibuya,  Y. Inoue,  S. Yamazaki,  T. Nakano,  S. Ohnishi,  N. Awaya,  H. Inoue,  H. Shima,  H. Akinaga,  H. Takagi,  H. Akoh,  Y. Tokura,  

[Date]2007/1/19
[Paper #]SDM2006-221
High-Performance FinFET with Dopant-Segregated Schottky Source/Drain

A. Kaneko,  A. Yagishita,  K. Yahashi,  T. Kubota,  M. Omura,  K. Matsuo,  I. Mizushima,  K. Okano,  H. Kawasaki,  T. Izumida,  T. Kanemura,  N. Aoki,  A. Kinoshita,  J. Koga,  S. Inaba,  K. Ishimaru,  Y. Toyoshima,  H. Ishiuchi,  K. Suguro,  K. Eguchi,  Y. Tsunashima,  

[Date]2007/1/19
[Paper #]SDM2006-222
Experimental Demonstrations of Superior Characteristics of Variable Body-Factor (γ) Fully-Depleted SOI MOSFETs with Extremely Thin BOX

Tetsu Ohtou,  Takuya Saraya,  Kimiaki Shimokawa,  Yasuhiro Doumae,  Yoshiki Nagatomo,  Jiro Ida,  Toshiro Hiramoto,  

[Date]2007/1/19
[Paper #]SDM2006-223
Relationship between Low-Field Mobility and High-Field Carrier Velocity in MOSFETs with High-k and SiO_2 Gate Dielectrics

Masumi SAITOH,  Ken UCHIDA,  

[Date]2007/1/19
[Paper #]SDM2006-224
Practical Vth Control Methods for Ni-FUSI/HfSiON MOSFETs on SOI Substrates

Koichi Terashima,  Kenzo Manabe,  Kensuke Takahashi,  Koji Watanabe,  Takashi Ogura,  Motofumi Saitoh,  Makiko Oshida,  Nobuyuki Ikarashi,  Toru Tatsumi,  Hirohito Watanabe,  

[Date]2007/1/19
[Paper #]SDM2006-225
SiN gate dielectric with oxygen-enriched interface (OI-SiN) utilizing dual-core-SiON technique for hp65-SoC LOP application

Shimpei TSUJIKAWA,  Hiroshi UMEDA,  Takashi HAYASHI,  Kazuhiro OHNISHI,  Katsuya SHIGA,  Kazumasa KAWASE,  Jiro YUGAMI,  Hidefumi YOSHIMURA,  Masahiro YONEDA,  

[Date]2007/1/19
[Paper #]SDM2006-226
Suppression of Poly-Gate-Induced Fluctuations in Carrier Profiles of Sub-50nm MOSFETs

Hidenobu FUKUTOME,  Youishi MOMIYAMA,  Tomohiro KUBO,  Eiji YOSHIDA,  Hiroshi MORIOKA,  Mitsugu TAJIMA,  Takayuki AOYAMA,  

[Date]2007/1/19
[Paper #]SDM2006-227
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[Date]2007/1/19
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[Date]2007/1/19
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[Date]2007/1/19
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