Electronics-Silicon Devices and Materials(Date:2006/12/07)

Presentation
表紙

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[Date]2006/12/7
[Paper #]
目次

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[Date]2006/12/7
[Paper #]
Influence of Hydrogen Atoms in a-Si on Excimer Laser Crystallization : Does hydrogen atoms affect nucleation and growth of poly-Si?

Naoto MATSUO,  Akira HEYA,  Tadashi SERIKAWA,  Naoya KAWAMOTO,  

[Date]2006/12/7
[Paper #]SDM2006-202
Low Temperature Crystallization of Si Film with Large Grain Obtained by Ni Nano Particle

Yasuhiro Nanjo,  Yukiharu Uraoka,  Takashi Fuyuki,  Mitsuhiro Okuda,  Ichiro Yamashita,  

[Date]2006/12/7
[Paper #]SDM2006-203
Semiconductor Laser Crystallization of Silicon Films Using Carbon Films as a Photo-Absorption Layer

Naoki SANO,  Nobuyuki ANDOH,  Toshiyuki SAMESHIMA,  

[Date]2006/12/7
[Paper #]SDM2006-204
Crystallization of Germanium Films by Laser Crystallization

Nobuyuki ANDOH,  Toshiyuki SAMESHIMA,  Seiiciro HIGASHI,  

[Date]2006/12/7
[Paper #]SDM2006-205
Non-contact, Non-destructive Characterization of Crystal Quality in Ultra-shallow Ion Implanted Silicon Wafers before and after Annealing

Masahiro Yoshimoto,  Hiroshi Nishigaki,  Hiroshi Harima,  Toshiyuki Isshiki,  Kitaek Kang,  Woo Sik Yoo,  

[Date]2006/12/7
[Paper #]SDM2006-206
Characterization of interfaces between ultrathin high-k dielectric films and Si(001) by high-resolution RBS/ERD

Kaoru NAKAJIMA,  Ming ZHAO,  Motofumi SUZUKI,  Kenji KIMURA,  Masashi UEMATSU,  Kazuyoshi TORII,  Satoshi KAMIYAMA,  Yasuo NARA,  Keisaku YAMADA,  Kiichi Tachi,  Kuniyuki Kakushima,  Hiroshi Iwai,  

[Date]2006/12/7
[Paper #]SDM2006-207
Improvement of SiO_2/4H-SiC Interface Properties by High-Pressure H_2O Vapor Annealing

Daisuke TAKEDA,  Hiroshi YANO,  Tomoaki HATAYAMA,  Yukiharu URAOKA,  Takashi FUYUKI,  

[Date]2006/12/7
[Paper #]SDM2006-208
High Quality Gate Insulator Film Formation on SiC at Low Temperature

Koutarou Tanaka,  Akinobu Teramoto,  Shigetoshi Sugawa,  Tadahiro Ohmi,  

[Date]2006/12/7
[Paper #]SDM2006-209
Lateral High-Voltage SiC MOSFETs with Low On-Resistance by Using Double RESURF Structure

Masato NOBORIO,  Jun SUDA,  Tsunenobu KIMOTO,  

[Date]2006/12/7
[Paper #]SDM2006-210
Improvement of Pattern Shape by Ink-Jet Printing Method

Masaki YAMAGUCHI,  Asa YAMAMOTO,  Yoichiro MASUDA,  

[Date]2006/12/7
[Paper #]SDM2006-211
Formation of Si Crystals from SiO_x films Induced by Ultrarapid Thermal Annealing and Their Photoluminescent Characteristics

Tatsuya OKADA,  Seiichiro HIGASHI,  Hirotaka KAKU,  Takuya YORIMOTO,  Hideki MURAKAMI,  Seiichi MIYAZAKI,  

[Date]2006/12/7
[Paper #]SDM2006-212
Analysis of Single Bio Nano Dot by using Scanning Probe Microscopy

R. Tanaka,  A. Miura,  Y. Uraoka,  T. Fuyuki,  I. Yamashita,  

[Date]2006/12/7
[Paper #]SDM2006-213
Effect of Oxygen- or Nitrogen-Implantation on Dislocation Dynamics in SiGe/Si Heterostructure

Akito Hara,  Naoyoshi Tamura,  Tomoji Nakamura,  

[Date]2006/12/7
[Paper #]SDM2006-214
A High Performance pMOSFET with Two-step Recessed SiGe-S/D Structure for 32nm node and Beyond

Nobuaki YASUTAKE,  Tatsuya ISHIDA,  Kazuya OHUCHI,  Nobutoshi AOKI,  Naoki KUSUNOKI,  Shinji MORI,  Ichiro MIZUSHIMA,  Tetsu MOROOKA,  Katsunori YAHASHI,  Shigeru KAWANAKA,  Atsushi AZUMA,  Kazunari ISHIMARU,  Yoshiaki TOYOSHIMA,  

[Date]2006/12/7
[Paper #]SDM2006-215
Transistor Characteristic Evaluation Technology for Assembly Stress and Assembly Stress Relaxation Design

Koji Koike,  Koji Takemura,  Hikari Sano,  Yutaka Itoh,  Masao Takahashi,  Kazuhiro Ishikawa,  Hiroshige Hirano,  

[Date]2006/12/7
[Paper #]SDM2006-216
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[Date]2006/12/7
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[Date]2006/12/7
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