Electronics-Silicon Devices and Materials(Date:2006/06/14)

Presentation
表紙

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[Date]2006/6/14
[Paper #]
目次

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[Date]2006/6/14
[Paper #]
Characterization of oxide films/SiC fabricated by metal-organic chemical vapor deposition

Shiro HINO,  Tomohiro HATAYAMA,  Eisuke TOKUMITSU,  Naruhisa MIURA,  Tatsuo OOMORI,  

[Date]2006/6/14
[Paper #]SDM2006-42
Photoemission Study of HfO_2/Ge (100) Stacked Structures

H. Nakagawa,  A. Ohta,  H. Abe,  H. Murakami,  S. Higashi,  S. Miyazaki,  

[Date]2006/6/14
[Paper #]SDM2006-43
Characterization of Interfacial Reactions in Al_2O_3/SiN_x/poly-Si Stack Structure by Photoemission Measurements

Hiroaki FURUKAWA,  Masahiro TAIRA,  Akio OHTA,  Hiroshi NAKAGAWA,  Hideki MURAKAMI,  Seiichi MIYAZAKI,  Kenji KOMEDA,  Mitsuhiro HORIKAWA,  Kuniaki KOYAMA,  Hideharu MIYAKE,  

[Date]2006/6/14
[Paper #]SDM2006-44
Local Charge Trapping and their Detrapping Process at Constant Voltage Stress in La_2O_3-Al_2O_3 Composite Films

Toshifumi SAGO,  Akiyoshi SEKO,  Mitsuo SAKASHITA,  Akira SAKAI,  Masaki OGAWA,  Shigeaki ZAIMA,  

[Date]2006/6/14
[Paper #]SDM2006-45
Characterization of Open Volumes in High-k Gate Dielectrics by Using Monoenergetic Positron Beams

Akira UEDONO,  Takashi OTSUKA,  Keiichi ITO,  Kenji SHIRAISHI,  Kikuo YAMABE,  Seiichi MIYAZAKI,  Naoto UMEZAWA,  Toyohiro CHIKYO,  Toshiyuki OHDAIRA,  Ryoichi SUZUKI,  Seiji INUMIYA,  Satoshi KAMIYAMA,  Yasushi AKASAKA,  Yasuo NARA,  Keisaku YAMADA,  

[Date]2006/6/14
[Paper #]SDM2006-46
Work-function engineering of poly-Si gate by Fermi pinning and its impact on low power CMOSFET

Yasuhiro SHIMAMOTO,  Jiro YUGAMI,  Masao INOUE,  Masaharu MIZUTANI,  Takeshi HAYASHI,  Masahiro YONEDA,  

[Date]2006/6/14
[Paper #]SDM2006-47
Influences of Annealing Conditions on Flatband Voltage Properties Using Continuously Workfunction-Tuned Metal Electrodes

K. OHMORI,  P. AHMET,  K. SHIRAISHI,  H. WATANABE,  Y. AKASAKA,  K. YAMABE,  M. YOSHITAKE,  K.-S. CHANG,  M. L. GREEN,  YAMADA K. /,  T. CHIKYOW,  

[Date]2006/6/14
[Paper #]SDM2006-48
Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO_2

Hiromichi YOSHINAGA,  Daisuke AZUMA,  Hideki MURAKAMI,  Akio OHTA,  Yuuki MUNETAKA,  Seiichiro HIGASHI,  Seiichi MIYAZAKI,  Takayuki AOYAMA,  Kimihiko KOSAKA,  Kentaro SHIBAHARA,  

[Date]2006/6/14
[Paper #]SDM2006-49
Surface Microroughness of Silicon : Mechanism and Its Reduction

Hitoshi Morinaga,  Kenji Shimaoka,  Tadahuro Ohmi,  

[Date]2006/6/14
[Paper #]SDM2006-50
Reduction of Ferritin Core Embedded in Amorphous Silicon Film

Takashi Matsumura,  Atsushi Miura,  Yukiharu Uraoka,  Takashi Fuyuki,  Shigeo Yoshii,  Ichiro Yamashita,  

[Date]2006/6/14
[Paper #]SDM2006-51
Comparison of Initial Oxidation between Si (110) and Si (100) Surfaces : From Real-Time Photoemission Spectroscopy

Maki SUEMITSU,  Atsushi KATO,  Hideaki TOGASHI,  Atsushi KONNO,  Yoshihisa YAMAMOTO,  Yuden TERAOKA,  Akitaka YOSHIGOE,  Yuzuru NARITA,  

[Date]2006/6/14
[Paper #]SDM2006-52
Gate Oxide Process Dependence of CMOS Performance on Si(110) Surface

Susumu HIYAMA,  Junli WANG,  Takayoshi KATO,  Tomoyuki HIRANO,  Kaori TAI,  Hayato IWAMOTO,  

[Date]2006/6/14
[Paper #]SDM2006-53
The dependence of the intermediate nitridation states density at Si_3N_4/Si interface on surface Si atoms density

Masaaki Higuchi,  Seiji Shinagawa,  Akinobu Teramoto,  Hiroshi Nohira,  Takeo Hattori,  Eiji Ikenaga,  Keisuke Kobayashi,  Shigetoshi Sugawa,  Tadahiro Ohmi,  

[Date]2006/6/14
[Paper #]SDM2006-54
Analysis of nitrogen in-depth profile in SiO_2/SiN stacks studied by angle-resolved photoelectron spectroscopy

Satoshi TOYODA,  Jun OKABAYASHI,  Masaharu OSHIMA,  Guo-Lin LIU,  Ziyuan LIU,  Kazuto IKEDA,  Koji USUDA,  

[Date]2006/6/14
[Paper #]SDM2006-55
Improvement of V_ shift with high N density SiN-based SiON gate dielectrics

D. Matsushita,  K. Muraoka,  Y. Nakasaki,  K. Kato,  S. Kikuchi,  K. Sakuma,  Y. Mitani,  M. Takayanagi,  K. Eguchi,  

[Date]2006/6/14
[Paper #]SDM2006-56
Influence of Nitrogen and Hydrogen on NBTI in Ultra-thin Gate oxide

Yuichiro MITANI,  Hideki SATAKE,  

[Date]2006/6/14
[Paper #]SDM2006-57
Ultra-thin HfON Film Formations by ECR Plasma Oxidation of HfN Films

Shun-ichiro OHMI,  Tomoki KUROSE,  Masaki SATOH,  

[Date]2006/6/14
[Paper #]SDM2006-58
Interfacial reaction in HfO_2/SiO_2/Si(001) during O_2 anneal observed by high-resolution RBS

Ming ZHAO,  Kaoru NAKAJIMA,  Motofumi SUZUKI,  Kenji KIMURA,  Masashi UEMATSU,  Kazuyoshi TORII,  Satoshi KAMIYAMA,  Yasuo NARA,  Keisaku YAMADA,  

[Date]2006/6/14
[Paper #]SDM2006-59
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