Electronics-Silicon Devices and Materials(Date:2006/01/19)

Presentation
表紙

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[Date]2006/1/19
[Paper #]
目次

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[Date]2006/1/19
[Paper #]
Silicon Nanodevices Based on SOI Structures Embedding an Artificial Dislocation Network

Yasuhiko ISHIKAWA,  Chihiro YAMAMOTO,  Michiharu TABE,  

[Date]2006/1/19
[Paper #]ED2005-224,SDM2005-236
Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands

Kensaku Ohkura,  Tetsuya Kitade,  Anri Nakajima,  

[Date]2006/1/19
[Paper #]ED2005-225,SDM2005-237
Multifunctional device using a nanodot array

Takuya Kaizawa,  Masashi Arita,  Yasuo Takahashi,  

[Date]2006/1/19
[Paper #]ED2005-226,SDM2005-238
Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor

Kensaku Ohkura,  Tetsuya Kitade,  Anri Nakajima,  

[Date]2006/1/19
[Paper #]ED2005-227,SDM2005-239
Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature : Fabrication using SOI and measurements of its characteristics

Katsuhiko NISHIGUCHI,  Yukinori ONO,  Akira FUJIWARA,  Hiroshi INOKAWA,  Yasuo TAKAHASHI,  

[Date]2006/1/19
[Paper #]ED2005-228,SDM2005-240
Carbon nanotube quantum dots combined with a GaAs/AlGaAs 2-dimensional electron gas

Koji Ishibashi,  Takeo Tsukamoto,  Satoshi Moriyama,  Takeo Uchida,  Tomoriho Yamaguchi,  

[Date]2006/1/19
[Paper #]ED2005-229,SDM2005-241
Single-photon-induced random-telegraph-signal in Si multidot structure

Ratno NURYADI,  Yasuhiko ISHIKAWA,  Michiharu TABE,  

[Date]2006/1/19
[Paper #]ED2005-230,SDM2005-242
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[Date]2006/1/19
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[Date]2006/1/19
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[Date]2006/1/19
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