Electronics-Silicon Devices and Materials(Date:2005/06/03)

Presentation
表紙

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[Date]2005/6/3
[Paper #]
目次

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[Date]2005/6/3
[Paper #]
Photoemission Study of UV-O_3 Oxidized Ge(100) and Si(100) Surfaces

Akio Ohta,  Hiroaki Furukawa,  Hiroshi Nakagawa,  Hideki Murakami,  Seiichirou Higashi,  Seiichi Miyazaki,  

[Date]2005/6/3
[Paper #]SDM2005-70
High resolution X-ray photoelectron spectroscopy study on Si_3N_4/Si interface structures and its correlation electrical properties by NH^* direct nitridation process

Masaaki Higuchi,  Masanori Komura,  Akinobu Teramoto,  Seiji Shinagawa,  Eiji Ikenaga,  Keisuke Kobayashi,  Hiroshi Nohira,  Shigetoshi Sugawa,  Takeo Hattori,  Tadahiro Omi,  

[Date]2005/6/3
[Paper #]SDM2005-71
Formation of Oxy-nitride Films using Pulse Time Modulated Nitrogen Plasma and Suppression of VUV Radiation Damage

Seiichi FUKUDA,  Chihiro TAGUCHI,  Yuji KATOU,  Yasushi ISHIKAWA,  Shuichi NODA,  Seiji SAMUKAWA,  

[Date]2005/6/3
[Paper #]SDM2005-72
Interface Trap Generation Induced by Charge Pumping Current under Dynamic Oxide Field Stresses

Shiyang ZHU,  Anri NAKAJIMA,  Takuo OHASHI,  Hideharu MIYAKE,  

[Date]2005/6/3
[Paper #]SDM2005-73
Breakdown Statistics for Gate Oxide Films Thicker Than 15nm

Tadashi MIHARA,  Yoshinari KAMAKURA,  Kenji TANIGUCHI,  

[Date]2005/6/3
[Paper #]SDM2005-74
Combining Ta_2O_5 and Nb_2O_5 in bilayered structures and solid solutions as dielectrics allowing low-temperature fabrication for use in MIM capacitors

Yuichi MATSUI,  Masahiko HIRATANI,  Isamu ASANO,  

[Date]2005/6/3
[Paper #]SDM2005-75
Analysis of Local Leakage Current on La_2O_3-Al_2O_3 Composite Films by Conductive Atomic Force Microscopy

Akiyoshi SEKO,  Toshifumi SAGO,  Ryota FUJITSUKA,  Mitsuo SAKASHITA,  Akira SAKAI,  Masaki OGAWA,  Shigeaki ZAIMA,  

[Date]2005/6/3
[Paper #]SDM2005-76
Chemical Bonding Features and Electrical Properties of Nitrogen Incorporated Y_2O_3-based Gate Dielectric Stacks

Hiroyuki Abe,  Hiroshi Nakagawa,  Masahiro Taira,  Akio Ohta,  Hideki Murakami,  Seiichiro Higashi,  Seiichi Miyazaki,  

[Date]2005/6/3
[Paper #]SDM2005-77
Deposition delay time on preparation of ZrO_2 High-k insulator by limited reaction sputtering

Kazuaki OHARA,  Hidetaka SUGIYAMA,  Kimihiro SASAKI,  Yasuto YONEZAWA,  

[Date]2005/6/3
[Paper #]SDM2005-78
Characterization of HfO_2 Thin Films Prepared from Hf(O-t-C_4H_9)_4 by Photo-Assisited MOCVD

Takeshi KANASHIMA,  Taizo TADA,  Masaki TSUMORI,  Masanori OKUYAMA,  

[Date]2005/6/3
[Paper #]SDM2005-79
Characterization of Chemical Bonding Features of NH_3-Annealed Hafnium Oxides Formed on Si(100)

H. Nakagawa,  A. Ohta,  H. Murakami,  S. Higashi,  S. Miyazaki,  

[Date]2005/6/3
[Paper #]SDM2005-80
High pressure water vapor annealing for improving HfSiO dielectrics properties

Prakaipetch Punchaipetch,  Hideki Nakamura,  Hiroshi Yano,  Tomoaki Hatayama,  Yukiharu Uraoka,  Takashi Fuyuki,  Toshiyuki Sameshima,  Sadayoshi Horii,  

[Date]2005/6/3
[Paper #]SDM2005-81
Characterization of the Carrier Trap Contribution to the Hysteresis in HfSiON Gate Dielectrics

Koji NAGATOMO,  Mariko TAKAYANAGI,  Takeshi WATANABE,  Ryosuke IIJIMA,  Kazunari ISHIMARU,  Hidemi ISHIUCHI,  

[Date]2005/6/3
[Paper #]SDM2005-82
Theoretical Studies on the Behaviors of H atoms in Hf-based Dielectric Films : Dielectric Breakdown Mechanism Based on Hole Traps

Kenji SHIRAISHI,  Kazuyoshi TORII,  Seiichi MIYAZAKI,  Kikuo YAMABE,  Toyohiro CHIKYOW,  Keisaku YAMADA,  Hiroshi KITAJIMA,  Tsunetoshi ARIKADO,  Yasuo NARA,  

[Date]2005/6/3
[Paper #]SDM2005-83
Thermochemical breakdown in HfSiON dielectrics

Takeshi YAMAGUCHI,  Izumi HIRANO,  Ryosuke IIJIMA,  Katsuyuki SEKINE,  Mariko TAKAYANAGI,  Kazuhiro EGUCHI,  Yuichiro MITANI,  Noburu FUKUSHIMA,  

[Date]2005/6/3
[Paper #]SDM2005-84
The Origin of Non-Saturating C-V Characteristics in Poly-Si Gate High-k MIS Structures

Naoki YASUDA,  Toshihide NABATAME,  Hideki SATAKE,  Akira TORIUMI,  

[Date]2005/6/3
[Paper #]SDM2005-85
Fabrication Process and Work Function Tuning in Fully Silicided Pd_2Si Gate

Kosei HOSAWA,  Kosuke SANO,  Takuji HOSOI,  Kentaro SHIBAHARA,  

[Date]2005/6/3
[Paper #]SDM2005-86
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[Date]2005/6/3
[Paper #]
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