Electronics-Silicon Devices and Materials(Date:2005/06/02)

Presentation
表紙

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[Date]2005/6/2
[Paper #]
目次

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[Date]2005/6/2
[Paper #]
First-principles calculations of dielectric constant of gate insulators : Study of Electronic and Lattice Vibrational Dielectric Constant

Tomoyuki HAMADA,  Hiroyoshi MOMIDA,  Takenori YAMAMOTO,  Tsuyoshi UDA,  Takahisa OHNO,  

[Date]2005/6/2
[Paper #]SDM2005-58
The First Principle Calculation of the Electronic Stress in the High-k Dielectrics Using the Rigged QED (Quantum Electrodynamics) Theory : Unified Nuclear-Electronic-Electromagnetic Field Approach

Akitomo TACHIBANA,  

[Date]2005/6/2
[Paper #]SDM2005-59
In situ spectroscopic ellipsometry monitoring of HfO_2 growth combined with first-principle molecular-orbital calculation

Yandong ZHENG,  Yoshishige TSUCHIYA,  Daisuke SATO,  Hiroshi MIZUTA,  Shunri ODA,  

[Date]2005/6/2
[Paper #]SDM2005-60
Estimation of the optical dielectric constant for HfSiOx thin film by using XPS and AES

N. Suzuki,  M. Yamawaki,  K. Torii,  T. Kawahara,  K. Hirose,  

[Date]2005/6/2
[Paper #]SDM2005-61
Potentiality of TEM-EELS

Hiroki TANAKA,  Mitsuo KOIKE,  Mitsuhiro TOMITA,  Yuuichi KAMIMUTA,  Tsunehiro INO,  Masahiro KOIKE,  Masato KOYAMA,  Shiro TAKENO,  

[Date]2005/6/2
[Paper #]SDM2005-62
Electronic structure analysis of high-k dielectric films by using TEM-EELS

Nobuyuki IKRASHI,  Kenzo MANABE,  Kensuke TAKAHASHI,  

[Date]2005/6/2
[Paper #]SDM2005-63
Evaluation of chemical states, crystallization and band offsets of gate insulators by photoelectron spectroscopy and x-ray absorption spectroscopy

Masaharu OSHIMA,  Satoshi TOYODA,  Haruhiko TAKAHASHI,  Jun OKABAYASHI,  Hiroshi KUMIGASHIRA,  Guo Lin LIU,  Ziyuan LIU,  Kazuto IKEDA,  Koji USUDA,  

[Date]2005/6/2
[Paper #]SDM2005-64
Scanning Tunneling Microscopy Study of High-k Gate Dielectric Films : Correlation between STM-induced Spots and Fixed Positive Charges

Noriyuki Miyata,  Hiroyuki Ota,  Masakazu Ichikawa,  

[Date]2005/6/2
[Paper #]SDM2005-65
Depth Profile of Nitrogen Atoms in Silicon Oxynitrides formed by Plasma Nitridation

Hiroshi Nohira,  Seiji Shinagawa,  Tetsuya Ikuta,  Mitsuaki Hori,  Masataka Kase,  Hideyuki Okamoto,  Tetsushi Yoshida,  Takeo Hattori,  

[Date]2005/6/2
[Paper #]SDM2005-66
Thermal stability of HfO_2 and its alloys as gate dielectric materials : Molecular dynamics simulation

Chioko KANETA,  Takahiro YAMASAKI,  Yuko KOSAKA,  

[Date]2005/6/2
[Paper #]SDM2005-67
Combinatorial Characterization of Electrical Properties On Hf-based oxides : Materials selection rule and interface control by thermodynamics

Toyohiro Chikyow,  Ken Hasegawa,  Tae Tamori,  Parhat Ahmet,  Dmitry Kukurznyak,  Kiyomi Nakajima,  Keisaku Yamada,  Hideomi Koinuma,  

[Date]2005/6/2
[Paper #]SDM2005-68
Fabrication of HfO_2/Si structure and its characterizaton using HR-RBS

Tomo UENO,  Yoshitaka NAGASATO,  Akiko KOBAYASHI,  Shin IRINO,  

[Date]2005/6/2
[Paper #]SDM2005-69
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[Date]2005/6/2
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