Electronics-Silicon Devices and Materials(Date:2005/03/04)

Presentation
表紙

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[Date]2005/3/4
[Paper #]
目次

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[Date]2005/3/4
[Paper #]
Electric Field Induced Resistance Switching in Transition Metal Oxide Junctions : Elucidation of Driving Mechanism for Resistance Switching Memories

Akihito SAWA,  Takeshi FUJII,  Masashi KAWASAKI,  Yoshinori TOKURA,  

[Date]2005/3/4
[Paper #]SDM2004-248
230% ROOM TEMPERATURE MAGNETORESISTANCE IN CoFeB/MgO/CoFeB MAGNETIC TUNNEL JUNCTIONS

D.D. Djayaprawira,  K. Tsunekawa,  M. Nagai,  H. Maehara,  S. Yamagata,  N. Watanabe,  S. Yuasa,  Y. Suzuki,  K. Ando,  

[Date]2005/3/4
[Paper #]SDM2004-249
A study for High Density MRAM vehicled on 0.18μm MRAM

Hajime YAMAGISHI,  Mitsuharu SHOJI,  Ikuhiro YAMAMURA,  Wataru OHTSUKA,  Hiroyuki YAMADA,  Motoaki NAKAMURA,  Makoto MOTOYOSHI,  Hiroshi KANO,  Masanori HOSOMI,  Tetsuya YAMAMOTO,  Kazuhiro BESSYO,  Hiroaki NARISAWA,  Hideo HACHINO,  Tsutomu SAGARA,  Hironobu MORI,  Chieko FUKUMOTO,  

[Date]2005/3/4
[Paper #]SDM2004-250
Design and Process Integration for High-Density, High-Speed, and Low-Power 6F^2 MRAM cell : Proposal of a New Magnetization Process

Yoshiaki ASAO,  Tadashi KAI,  Sumio IKEGAWA,  Kenji TSUCHIDA,  Nobuyuki ISHIWATA,  Hiromitsu HADA,  Syuichi TAHARA,  Hiroaki YODA,  

[Date]2005/3/4
[Paper #]SDM2004-251
A 0.13μm MRAM with high speed operation and high reliability

Shuichi UENO,  Takahisa EIMORI,  Takeharu KUROIWA,  Haruo FURUTA,  Junichi TSUCHIMOTO,  Shinroku MAEJIMA,  Takaharu TSUJI,  Tsuyoshi KOGA,  Yuzuru OJI,  

[Date]2005/3/4
[Paper #]SDM2004-252
Fabrication of Ferroelectric Nanostructures by MOCVD and Their Properties

Masaru SHIMIZU,  Hajime NONOMURA,  Hironori FUJISAWA,  Hirohiko NIU,  Koichiro HONDA,  

[Date]2005/3/4
[Paper #]SDM2004-253
Effect of Excess Bi Composition for Bismuth Titanate Films Grown on Platinum Bottom Electrode

Masaki YAMAGUCHI,  Asa YAMAMOTO,  Yoichiro MASUDA,  

[Date]2005/3/4
[Paper #]SDM2004-254
Analysis on Enhanced Crystallization of Oxide Thin Films Caused by Prebaking under Reduced Oxygen Ambience

Yoshihisa FUJISAKI,  Hiroshi ISHIWARA,  

[Date]2005/3/4
[Paper #]SDM2004-255
Preparation of PZT Thin Film Capacitor by MOCVD Method : Growth Stability and Dependency on Before and After Process

Yutaka Nishioka,  Masahiko Kajinuma,  Takeshi Masuda,  Isao Kimura,  Shin Kikuchi,  Takehito Jimbo,  Masahisa Ueda,  Mitsuhiro Endo,  Yutaka Kokaze,  Koukou Suu,  

[Date]2005/3/4
[Paper #]SDM2004-256
Study on MFIS Structure Using SiO_2 Buffer Film with Nitrided Surface

Masakazu HIRAKAWA,  Minoru NODA,  Masanori OKUYAMA,  

[Date]2005/3/4
[Paper #]SDM2004-257
Single-transistor-cell type ferroelectric memories using metal/ferroelectric/insulator/semiconductor structures

Koji AIZAWA,  Kazuhiro TAKAHASHI,  Byung-Eun PARK,  Hiroshi ISHIWARA,  

[Date]2005/3/4
[Paper #]SDM2004-258
Nonvolatile SRAM based on Phase Change

Masashi TAKATA,  Kazuya NAKAYAMA,  Takatomi IZUMI,  Toru SHINMURA,  Akio KITAGAWA,  

[Date]2005/3/4
[Paper #]SDM2004-259
Multi-step Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories

Takeshi NAGAI,  Mitsuhisa IKEDA,  Hideki MURAKAMI,  Seiichiro HIGASHI,  Seiichi MIYAZAKI,  

[Date]2005/3/4
[Paper #]SDM2004-260
Charging and Discharging Characteristics in MOS Capacitors with a Si Quantum Dots Floating Gate under Light Illumination

Taku Shibaguchi,  Mitsuhisa Ikeda,  Seiichiro Higashi,  Seiichi Miyazaki,  

[Date]2005/3/4
[Paper #]SDM2004-261
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[Date]2005/3/4
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[Date]2005/3/4
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[Date]2005/3/4
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