Electronics-Silicon Devices and Materials(Date:2005/01/14)

Presentation
表紙

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[Date]2005/1/14
[Paper #]
目次

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[Date]2005/1/14
[Paper #]
Transport Properties of Sub-10-nm Planar-Bulk-CMOS Devices

Hitoshi WAKABAYASHI,  Tatsuya EZAKI,  Masami HANE,  Takeo IKEZAWA,  Toshitsugu SAKAMOTO,  Hisao KAWAURA,  Shigeharu YAMAGAMI,  Nobuyuki IKARASHI,  Kiyoshi TAKEUCHI,  Toyoji YAMAMOTO,  

[Date]2005/1/14
[Paper #]SDM2004-209
Performance enhancements of partially-and fully-depleted strained-SOI MOSFETs

T. NUMATA,  T. IRISAWA,  T. TEDUKA,  J. KOGA,  N. HIRASHITA,  K. USUDA,  E. TOYODA,  Y. MIYAMURA,  A. TANABE,  N. SUGIYAMA,  S. TAKAGI,  

[Date]2005/1/14
[Paper #]SDM2004-210
Mobility Improvement for 45nm Node by Combination of Stress Control and Channel Orientation Design

T. Komoda,  A. Oishi,  T. Sanuki,  K. Kasai,  H. Yoshimura,  K. Ohno,  M. Iwai,  M. Saito,  F. Matsuoka,  N. Nagashima,  T. Noguchi,  

[Date]2005/1/14
[Paper #]SDM2004-211
In-Plane Mobility Anisotropy and Universality Under Uni-Axial Strains in n-and p-MOS Inversion Layers on (100), (110), and (111)

Hiroshi IRIE,  Koji KITA,  Kentaro KYUNO,  Akira TORIUMI,  

[Date]2005/1/14
[Paper #]SDM2004-212
Room-Temperature Demonstration of Current Switching and Analog Pattern Matching Using Integrated Silicon Single-Electron Transistor Circuits

Masumi SAITOH,  Hidehiro HARATA,  Toshiro HIRAMOTO,  

[Date]2005/1/14
[Paper #]SDM2004-213
HfSiON Gate Dielectric MOSFET with Composition Controlled Ni-silicide Gate Electrode for Low Power Devices

Kensuke TAKAHASHI,  Kenzo MANABE,  Taeko IKARASHI,  Nobuyuki IKARASHI,  Takashi HASE,  Takuya YOSHIHARA,  Heiji WATANABE,  Toru TATSUMI,  Yasunori MOCHIZUKI,  

[Date]2005/1/14
[Paper #]SDM2004-214
Influence of Nitrogen Distribution in Ultra-thin SiON on NBTI under AC Stress

Yuichiro Mitani,  

[Date]2005/1/14
[Paper #]SDM2004-215
Physical model of BTI, TDDB and SILC in HfO_2-based high-k gate dielectrics

K. Torii,  K. Shiraishi,  S. Miyazaki,  K. Yamabe,  M. Boero,  T. Chikyow,  K. Yamada,  H. Kitajima,  T. Arikado,  

[Date]2005/1/14
[Paper #]SDM2004-216
Impact of Hf Concentration on Performance and Reliability for HfSiON-CMOSFET

Takeshi WATANABE,  Mariko TAKAYANAGI,  Kenji KOJIMA,  Katsuyuki SEKINE,  Hikoyuki YAMASAKI,  Kazuhiro EGUCHI,  Kazunari ISHIMARU,  Hidemi ISHIUCHI,  

[Date]2005/1/14
[Paper #]SDM2004-217
Silicon on Thin BOX : Novel CMOSFET for Low-Power and High-Performance Application Featuring Wide-Range Back-Bias Control

Ryuta TSUCHIYA,  Masatada HORIUCHI,  Shinichiro KIMURA,  Masanao YAMAOKA,  Takayuki KAWAHARA,  Sigeto MAEGAWA,  Takashi IPPOSHI,  Yuzuru OHJI,  Hideyuki MATSUOKA,  

[Date]2005/1/14
[Paper #]SDM2004-218
Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50nm N-MOSFETs

H. Fukutome,  Y. Momiyama,  T. Kubo,  Y. Tagawa,  T. Aoyama,  H. Arimoto,  

[Date]2005/1/14
[Paper #]SDM2004-219
Comprehensive Study of Soft Errors in Advanced CMOS Circuits with 90/130nm Technology

Yoshiharu TOSAKA,  Hideo EHARA,  Mitsuaki IGETA,  Taiki UEMURA,  Hideki OKA,  Nobuyuki MATSUOKA,  Kichiji HATANAKA,  

[Date]2005/1/14
[Paper #]SDM2004-220
Scalability Study on a Capacitorless 1T-DRAM : From Single-gate PD-SOI to Double-gate FinDRAM

Tetsu TANAKA,  Eiji YOSHIDA,  Toshihiko MIYASHITA,  

[Date]2005/1/14
[Paper #]SDM2004-221
裏表紙

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[Date]2005/1/14
[Paper #]