Electronics-Silicon Devices and Materials(Date:2004/10/07)

Presentation
表紙

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[Date]2004/10/7
[Paper #]
目次

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[Date]2004/10/7
[Paper #]
Interface Control Technique to Realize HfSiON Gate with Low Leakage and High Mobility

Masao INOUE,  Masaharu MIZUTANI,  Koji NOMURA,  Jiro Yugami,  Junichi TSUCHIMOTO,  Yoshikazu Ohno,  Masahiro YONEDA,  

[Date]2004/10/7
[Paper #]SDM2004-173
Improvement of Ferroelectric STN Thin Film Properties by Oxygen Radical Treatment

Tatsunori ISOGAI,  Ichirou TAKAHASHI,  Hiroyuki SAKURAI,  Tetsuya GOTO,  Masaki HIRAYAMA,  Akinobu TERAMOTO,  Shigetoshi SUGAWA,  Tadahiro OHMI,  

[Date]2004/10/7
[Paper #]SDM2004-174
High-Speed, Ultra-Low-BER Interconnection for Memory Test Systems

Toshiyuki Okayasu,  

[Date]2004/10/7
[Paper #]SDM2004-175
Radical Oxidation process using SPA plasma : Oxidation on poly-Si substrate

Takashi KOBAYASHI,  Shingo FURUI,  Junichi KITAGAWA,  Shigenori OZAKI,  

[Date]2004/10/7
[Paper #]SDM2004-176
Electron Escape Depths in Ultrathin Silicon Oxide Layers Formed on Si(lOO) by Radical and Thermal Oxidation

Hideyuki Okamoto,  Kazuhumi Azuma,  Seiji Shinagawa,  Tetsushi Yosida,  Hiroshi Nohira,  Eiji Ikenaga,  Yasutaka Takata,  Keisuke Kobayashi,  Shigi Shin,  Takeo Hattori,  

[Date]2004/10/7
[Paper #]SDM2004-177
Control of nitrogen depth profile and chemical bonding state in radical nitrided silicon oxide film

Kazumasa Kawase,  Hiroshi Umeda,  Masao Inoue,  Tomoyuki Suwa,  Masanori Higuchi,  Masanori Komura,  Akinobu Teramoto,  Tadahiro Ohmi,  

[Date]2004/10/7
[Paper #]SDM2004-178
X-ray Photoelectron Spectroscopy Study of Silicon Oxynitrides formed by Plasma Nitridation

Seiji Shinagawa,  Tetsuya Ikuta,  Mitsuaki Hori,  Masataka Kase,  Hideyuki Okamoto,  Tetsushi Yoshida,  Hiroshi Nohira,  Takeo Hattori,  

[Date]2004/10/7
[Paper #]SDM2004-179
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[Date]2004/10/7
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[Date]2004/10/7
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