Electronics-Silicon Devices and Materials(Date:2004/06/14)

Presentation
表紙

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[Date]2004/6/14
[Paper #]
目次

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[Date]2004/6/14
[Paper #]
Improvement in the Readout Reliability of a Nondestructive Readout FeRAM by Asymmetrical Programming

Shinzo Koyama,  Yoshihisa Kato,  Takayoshi Yamada,  Yasuhiro Shimada,  

[Date]2004/6/14
[Paper #]SDM2004-35
Low Cost and Highly Reliable, 65nm-node Cu Dual Damascene Interconnects

Makoto UEKI,  Mitsuru NARIHIRO,  Hiroto OHTAKE,  Masayoshi TAGAMI,  Munehiro TADA,  Fuminori ITO,  Yoshimichi HARADA,  Mari ABE,  Naoya INOUE,  Koichi ARAI,  Tsuneo TAKEUCHI,  Shinobu SAITO,  Takahiro ONODERA,  Naoya FURUTAKE,  Masayuki HIROI,  Makoto SEKINE,  Yoshihiro HAYASHI,  

[Date]2004/6/14
[Paper #]SDM2004-36
Integration of Interconnect Process Highly Manufacturable for 65nm CMOS Platform Technology (CMOS5)

K. Honda,  M. Kanda,  R. Ishizuka,  Y. Moriuchi,  Y. Matsubara,  M. Habu,  T. Yoshida,  S. Matsuda,  H. Kittaka,  H. Miyajima,  T. Hachiya,  A. Kajita,  T. Usui,  R. Kanemura,  N. Nagashima,  Y. Okamoto,  S. Yamada,  T. Noguchi,  

[Date]2004/6/14
[Paper #]SDM2004-37
3-Dimensional Structures of Pores in Low-k Films Observed by Quantitative TEM Tomograph and Their Impacts on Penetration

Miyoko SHIMADA,  Junichi SHIMANUKI,  Nobuyuki OHTSUKA,  Akira FURUYA,  Yasuhide INOUE,  Shinichi OGAWA,  

[Date]2004/6/14
[Paper #]SDM2004-38
Mesoscopic-range strain field under SiO_2/Si interface with using the phase-sensitive X-ray diffraction technique

Wataru Yashiro,  Kazushi Miki,  Kazushi Sumitani,  Toshio Takahashi,  Yoshitaka Yoda,  Kensuke Takahashi,  Takeo Hattori,  

[Date]2004/6/14
[Paper #]SDM2004-39
Analysis of Formation Mechanism of the Energy Bandgap in the Radical Nitridation Process

Hiroki KONDO,  Keigo KAWAAI,  Kayoko MIYAZAKI,  Akira SAKAI,  Shigeaki ZAIMA,  Yukio YASUDA,  

[Date]2004/6/14
[Paper #]SDM2004-40
Drastic decrease of HF-etching rate of HfO_2 films by increase of CVD deposition temperature

Shinji Fujii,  Noriyuki Miyata,  Shinji Migita,  Tsuyoshi Horikawa,  Akira Toriumi,  

[Date]2004/6/14
[Paper #]SDM2004-41
Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH_3-nitrided Si(100) surfaces

Hiroshi Nakagawa,  Akiio Ohta,  Fumihito Takeno,  Satoru Nagamachi,  Hideki Murakami,  Seiichiro Higashi,  Seiichi Miyazaki,  

[Date]2004/6/14
[Paper #]SDM2004-42
Electronic structures of high-dielectric HfO_2 gate insulators studied by photoemission spectroscopy and x-ray absorption spectroscopy : UHV annealing effect

Satoshi TOYOTA,  Jun OKABAYASHI,  Hiroshi KUMIGASHIRA,  Masaharu OSHIMA,  Masaaki NIWA,  Koji USUDA,  Guo-Lin LIU,  

[Date]2004/6/14
[Paper #]SDM2004-43
Photoemission Study of Interfacial Reaction in Ultarathin HfAlOx/Si(100) Stack Structures

Akio Ohta,  Hiroshi Nakagawa,  Hideki Murakami,  Seiichirou Higashi,  Seiichi Miyazaki,  Takaaki Kawahara,  Kazuyoshi Torii,  

[Date]2004/6/14
[Paper #]SDM2004-44
Radical Nitridation of PLCVD HfSixOy Gate Dielectrics : Control of Hf composition and nitrogen profile

Hideki Nakamura,  Prakaipetch Punchaipetch,  Hiroshi Yano,  Tomoaki Hatayama,  Yukiharu Uraoka,  Takashi Huyuki,  Sadayoshi Horii,  

[Date]2004/6/14
[Paper #]SDM2004-45
Growth and electrical properties of hafnium silicat films by vapor-liquid hybrid deposition : Growth of silicate films using TEOS precursor

Yi XUAN,  Daisuke HOJO,  Tetsuji YASUDA,  

[Date]2004/6/14
[Paper #]SDM2004-46
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[Date]2004/6/14
[Paper #]
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[Date]2004/6/14
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