Electronics-Silicon Devices and Materials(Date:2004/01/26)

Presentation
表紙

,  

[Date]2004/1/26
[Paper #]
目次

,  

[Date]2004/1/26
[Paper #]
Self Aligned Metal Capping Technique on Cu Interconnect Using Low Pressure W-CVD Process

Hiroshi ASHIHARA,  Kensuke ISHIKAWA,  Takayuki OSHIMA,  Katsuhiro SASAJIMA,  Junji NOGUCHI,  Nobuhiro KONISHI,  Syouichi UNO,  Akira OHTAGURO,  Maki KUBO,  Ken TSUGANE,  Tomio IWASAKI,  Tatsuyuki SAITO,  

[Date]2004/1/26
[Paper #]SDM2003-222
Continual Metallization Processing using Supercritical Fluids

Eiichi KONDOH,  Masaki HISHIKAWA,  Koichiro SHIGAMA,  

[Date]2004/1/26
[Paper #]SDM2003-223
Bottom-up Fill of Copper in High Aspect Ratio Via Holes by Electroless Plating

S. Shingubara,  Z. Wang,  O. Yaegashi,  R. Obata,  H. Sakaue,  T. Takahagi,  

[Date]2004/1/26
[Paper #]SDM2003-224
Resistance-Ratio Measurement as a Monitor of the Electromigration Reliability of Commercial ICs

Takeshi Ishida,  Kenji Hinode,  Kenichi Takeda,  Takeshi Furusawa,  Katsunori Tagiri,  Takahiro Nakayama,  Mamoru Fujita,  

[Date]2004/1/26
[Paper #]SDM2003-225
Electromigration-induced Void Nucleation and Growth in Single-Damascene Cu Interconnects

Shinji Yokogawa,  

[Date]2004/1/26
[Paper #]SDM2003-226
Misalignment-tolerated, Cu Dual Damascene Interconnects with Low-k SiOCH film by a Novel Via-first, Multi-Hard-Mask Process

H. OHTAKE,  M. TAGAMI,  K. ARITA,  Y. HAYASHI,  

[Date]2004/1/26
[Paper #]SDM2003-227
Multilevel Interconnects with Nano-Clustering Silica (NCS)

Junya NAKAHIRA,  Nobuhiro MISAWA,  Iwao SUGIURA,  Yoshihiro NAKATA,  Fumitoshi SUGIMOTO,  Nobuyuki NISHIKAWA,  Yoshihisa IBA,  Hideki KITADA,  Akihiro HASEGAWA,  Masao OSHIMA,  Shun-ichi FUKUYAMA,  Noriyoshi SHIMIZU,  Hideya MATSUYAMA,  Takayuki OHBA,  Ei YANO,  Motoshu MIYAJIMA,  

[Date]2004/1/26
[Paper #]SDM2003-228
Novel Self-Assembled Ultra-Low-k Porous Silica Films with High Mechanical Strength for 45 nm BEOL Technology

Y. Oku,  K. Yamada,  T. Goto,  Y. Seino,  A. Ishikawa,  T. Ogata,  K. Kohmura,  N. Fujii,  N. Hata,  R. Ichikawa,  T. Yoshino,  C. Negoro,  A. Nakano,  Y. Sonoda,  S. Takada,  H. Miyoshi,  S. Oike,  H. Tanaka,  H. Matsuo,  K. Kinoshita,  T. Kikkawa,  

[Date]2004/1/26
[Paper #]SDM2003-229
A New Plasma-Enhanced Co-Polymerization (PCP) Technology for Reinforcing Mechanical Properties of Organic Silica Low-k/Cu Interconnects on 300 mm Wafers

J. Kawahara,  A. Nakano,  N. Kunimi,  K. Kinoshita,  Y. Hayashi,  A. Ishikawa,  Y. Seino,  T. Ogata,  H. Takahashi,  Y. Sonoda,  T. Yoshino,  T. Goto,  S. Takada,  R. Ichikawa,  H. Miyoshi,  H. Matsuo,  S. Adachi,  T. Kikkawa,  

[Date]2004/1/26
[Paper #]SDM2003-230
A 65nm-node interconnect technology using ultra-thin low-k pore seal

Munehiro TADA,  Yoshimichi HARADA,  Takao TAMURA,  Naoya INOUE,  Fuminori ITO,  OHTAKE Hiroto /,  Mitsuru NARIHIRO,  Masayoshi TAGAMI,  Makoto UEKI,  Ken-ichiro HIJIOKA,  Mari ABE,  Tsuneo TAKEUCHI,  Shinobu SAITO,  Takahiro ONODERA,  Naoya FURUTAKE,  Kohichi ARAI,  Kiyoshi FUJII,  Yoshihiro HAYASHI,  

[Date]2004/1/26
[Paper #]SDM2003-231
奥付

,  

[Date]2004/1/26
[Paper #]
複写される方へ

,  

[Date]2004/1/26
[Paper #]