Electronics-Silicon Devices and Materials(Date:2003/12/12)

Presentation
表紙

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[Date]2003/12/12
[Paper #]
目次

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[Date]2003/12/12
[Paper #]
[Invited Paper] Low Temperature Gate Dielectrics for Organic Thin-Film Transistors on Plastic Substrates

Prakaipetch Punchaipetch,  Gaurang Pant,  Robert M. Wallace,  Bruce E. Gnade,  

[Date]2003/12/12
[Paper #]SDM2003-179(2003-12)
Dependence of Poly-Si TFT Characteristic on Oxide Interface Traps and Grain Boundary Traps and its Application to Diagnosis of Fabrication Processes

Mutsumi KIMURA,  Satoshi INOUE,  Tatsuya SHIMODA,  

[Date]2003/12/12
[Paper #]SDM2003-180(2003-12)
Activation of dopant atoms doped to polycrystalline silicon by ion doping method

Toshiyuki Sameshima,  Nobuyuki Andoh,  Yasunori Andoh,  

[Date]2003/12/12
[Paper #]SDM2003-181(2003-12)
Crystal growth of polycrystalline Si prepared by combined method of SPC followed by ELA

N. Kawamoto,  N. Matsuo,  H. Hamada,  Y. Harada,  

[Date]2003/12/12
[Paper #]SDM2003-182(2003-12)
The deposition of low-temperature poly crystalline silicon by effects of hydrogen radicals and high density / low potential plasma Technique

Hiroya KIRIMURA,  Kiyoshi KUBOTA,  Eiji TAKAHASHI,  Shigeaki KISHIDA,  Kiyoshi OGATA,  Koji KITAJIMA,  Yukiharu URAOKA,  Takashi FUYUKI,  

[Date]2003/12/12
[Paper #]SDM2003-183(2003-12)
Calculation of Carrier Thermal Velocity in Si-NMOSFET : Dependence on Channel Impurity Concentration, Backscattering Coefficient, and Si-channel Thickness

Michiru HOGYOKU,  Toshiaki TSUCHIYA,  

[Date]2003/12/12
[Paper #]SDM2003-184(2003-12)
Fabrication of Silicon Doped Bismuth Titanate Thin Films

Masaki Yamaguchi,  Yoichiro Masuda,  

[Date]2003/12/12
[Paper #]SDM2003-185(2003-12)
Effect of Low-Pressure Consolidation Process on Electrical Properties of Sol-Gel Derived PZT Thin Films

Takaaki MIYASAKO,  Masaru SENOO,  Eisuke TOKUMITSU,  

[Date]2003/12/12
[Paper #]SDM2003-186(2003-12)
Characterization of Hf0/Si interface deposited by PLD

Takeshi KANASHIMA,  Masayuki SOHGAWA,  Koji IKEDA,  Masato YOSHIDA,  Masanori OKUYAMA,  

[Date]2003/12/12
[Paper #]SDM2003-187(2003-12)
Observation of SiGe/Si micro-origami structure fabricated on SOI substrate

Yoshihisa SAKANO,  Daisuke MORI,  Takashi TOKUDA,  Jun Ohta,  Masahiro NUNOSHITA,  Kazuyoshi KUBOTA,  Pablo O. Vaccaro,  Syuichi TAMURA,  Hailong Wang,  Nobuo SAITO,  

[Date]2003/12/12
[Paper #]SDM2003-188(2003-12)
Design and Fabrication of High-Voltage SiC RESURF MOSFETs

Tsunenobu Kimoto,  Hajime Kosugi,  Yohsuke Kanzaki,  Jun Suda,  Hiroyuki Matsunami,  

[Date]2003/12/12
[Paper #]SDM2003-189(2003-12)
4H-SIC MOSFETs with a Novel Channel Structure (SC-MOSFET)

Junji Kaido,  Tsunenobu Kimoto,  Jun Suda,  Hiroyuki Matsunami,  

[Date]2003/12/12
[Paper #]SDM2003-190(2003-12)
Device Simulation of Photo Electrode in Silicon Interface by Nano-Scale Control

Toshiki YAGI,  Yukiharu URAOKA,  Takashi FUYUKI,  

[Date]2003/12/12
[Paper #]SDM2003-191(2003-12)
Photoinduced Effects on Single-Charge Tunneling in a Silicon Multidot Structure

Hiroya IKEDA,  Ratno NURYADI,  Yasuhiko ISHIKAWA,  Michiharu TABE,  

[Date]2003/12/12
[Paper #]SDM2003-192(2003-12)
Floating Gate Memory with Si Quantum Dot : Electron implantation into Si nano dot with PECVD method

Junko IKAI,  Takio HIKONO,  Yukiharu URAOKA,  Takashi FUYUKI,  Hiroya KIRIMURA,  Kenji KATO,  

[Date]2003/12/12
[Paper #]SDM2003-193(2003-12)
Direct adsorption of ferritin to Si substrate

Hiroyuki KAWASHIMA,  Takio HIKONO,  Keisuke YAMADA,  Yukiharu URAOKA,  Ichiro YAMASHITA,  Takashi FUYUKI,  

[Date]2003/12/12
[Paper #]SDM2003-194(2003-12)
Control of Electronic Charging of Silicon-Quantum-Dots and its Application to Floating Gate MOS Devices

Seiichi Miyazaki,  

[Date]2003/12/12
[Paper #]SDM2003-195(2003-12)
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[Date]2003/12/12
[Paper #]
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