IEICE Technical Committee

Electronics-Silicon Devices and Materials(Date:2003/10/13)

Presentation

[Date]2003/10/13
[Paper #]

Electrical Characteristic Analysis and Device Simulation of Poly crystalline Silicon Thin-Film Transistors

Mutsumi KIMURA,

[Date]2003/10/13
[Paper #]SDM2003-161

High Performance Poly-Si TFT with Thin Gate Oxide Film Grown by Oxygen Radical(O^*)

Katsuji ISHII, Fuminobu IMAIZUMI, Tomohiko HAYASHI, Akinobu TERAMOTO, Masaki HIRAYAMA, Shigetoshi SUGAWA, Tadahiro OHMI,

[Date]2003/10/13
[Paper #]SDM2003-162

Formation of Radical Oxidation Films using RLSA Plasma : Evaluation of the performance of radical oxidation formed at low temperature

J KITAGAWA, S FURUI, T KOBAYASHI, S OZAKI,

[Date]2003/10/13
[Paper #]SDM2003-163

Formation of Ultra-Thin Oxy-Nitride Gate Dielectrics using the RLSA plasma

Yoshihiro SATO, Seiji MATSUYAMA, Tatsuo NISHITA, Toshio NAKANISHI, Shigenori OZAKI,

[Date]2003/10/13
[Paper #]SDM2003-164

Dependence of SiO2/Si Interface Structure on Low-Temperature Oxidation Process

Masatoshi SHIOJI, Kazuhumi AZUMA, Yukihiko NAKATA, Kensuke TAKAHASHI, Mustafa Bin SEMAN, Takayoshi SHIRAISHI, Tetushi YOSHIDA, Hiroshi NOHIRA, Yasutaka TAKATA, Keisuke KOBAYASHI, Shik SHIN, Takeo HATTORI,

[Date]2003/10/13
[Paper #]SDM2003-165

Synchrotron radiation X-ray reflectivity measurements of CVD-silicon oxide film treated by radical oxidation

kazumasa KAWASE, Masao INOUE, Yasushi UEHARA, Hiroshi UMEDA, Hiroshi KUROKAWA,

[Date]2003/10/13
[Paper #]SDM2003-166

Fabrication of SiN Gate Dielectrics by Direct Nitridation of Si Substrate

Masao INOUE, Jun-ichi TSUCHIMOTO, Yoshikazu OHNO,

[Date]2003/10/13
[Paper #]SDM2003-167

Very High Reliability of Ultrathin Silicon Nitride Gate Dielectric Film for sub-1OOnm Generation

Masanori KOMURA, Masaaki HIGUCHI, Weitao CHENG, Ichiro OHSHIMA, Akinobu TERAMOTO, Masaki HIRAYAMA, Shigetoshi SUGAWA, Tadahiro OHMI,

[Date]2003/10/13
[Paper #]SDM2003-168

奥付

[Date]2003/10/13
[Paper #]

複写される方へ

[Date]2003/10/13
[Paper #]