Electronics-Silicon Devices and Materials(Date:2003/08/15)

Presentation
表紙

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[Date]2003/8/15
[Paper #]
目次

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[Date]2003/8/15
[Paper #]
Development of Low Power Data Recovery Circuit for SFI-5 Interface

Hiroki YAMASHITA,  Tatsuya SAITOH,  Fumio YUUKI,  Akio KOYAMA,  Masahito SONEHARA,  

[Date]2003/8/15
[Paper #]SDM2003-133,ICD2003-66
A 39-to-45-Gbit/s Multi-Data-Rate Clock and Data Recovery Circuit with a New Lock Detector

Hideyuki NOSAKA,  Eiichi SANO,  Kiyoshi ISHII,  Minoru IDA,  Kenji KURISHIMA,  Shoji YAMAHATA,  Tsugumichi SHIBATA,  

[Date]2003/8/15
[Paper #]SDM2003-134,ICD2003-67
5000ppm Spread Spectrum Transmitter and Receiver with Self-running Phase interpolator for 3Gbps Serial ATA

Morishige AOYAMA,  Kazuo OGASAWARA,  Mitsutoshi Sugawara,  Terukazu ISHIBASHI,  Takashi ISHIBASHI,  Shinichi SHIMOYAMA,  Kouichi YAMAGUCHI,  Tomonori YANAGITA,  Toshihiro NOMA,  

[Date]2003/8/15
[Paper #]SDM2003-135,ICD2003-68
Memory cell for Embeded DRAM on SOI : FBC(Floating Body Cell)

Yoshihiro MINAMI,  Kazumi INOH,  Tomoaki SHINO,  Hiroaki YAMADA,  Hiroomi NAKAJIMA,  Takashi YAMADA,  Takashi OHSAWA,  Tomoki HIGASHI,  Katsuyuki FUJITA,  Tamio IKEHASHI,  Takeshi KAJIYAMA,  Yoshiaki FUKUZUMI,  Takeshi HAMAMOTO,  Hidemi ISHIUCHI,  

[Date]2003/8/15
[Paper #]SDM2003-136,ICD2003-69
A Memory Using One-Transistor Gain Cell on SOI(FBC) with Performance Suitable for Embedded DRAM's : Measurement Results of Cell Characteristics and Memory Performance

Takashi Ohsawa,  Tomoki Higashi,  Katsuyuki Fujita,  Tamio Ikehashi,  Takeshi Kajiyama,  Yoshiaki Fukuzumi,  Tomoaki Shino,  Hiroaki Yamada,  Hiroomi Nakajima,  Yoshihiro Minarni,  Takashi Yamada,  Kazumi Inoh,  Takeshi Hamamoto,  

[Date]2003/8/15
[Paper #]SDM2003-137,ICD2003-70
The Umbrella Cell : A Logic-Process-Compatible 2T Cell for SOC Applications

Satoru AKIYAMA,  Nobuhiro OODAIRA,  Tsuyoshi ISHIKAWA,  Digh HISAMOTO,  Takao WATANABE,  

[Date]2003/8/15
[Paper #]SDM2003-138,ICD2003-71
Bitline/Plateline Reference-Level-Precharge Scheme for High-Density ChainFeRAM

Kohei Oikawa,  D. Takashima,  S. Shiratake,  K. Hoya,  H.O. Joachim,  

[Date]2003/8/15
[Paper #]SDM2003-139,ICD2003-72
A 512KB MONOS type Flash Memory Module Embedded in a Microcontroller

Toshihiro Tanaka,  Hiroyuki Tanikawa,  Takashi Yamaki,  Yukiko Umemoto,  Akira Kato,  Yutaka Shinagawa,  Mitsuru Hiraki,  

[Date]2003/8/15
[Paper #]SDM2003-140,ICD2003-73
A 90 nm Low Power 32K-Byte Embedded SRAM with Gate Leakage Suppression Circuit for Mobile Applications

Koji Nii,  Susumu Imaoka,  Tomoaki Yoshizawa,  Yasumasa Tsukamoto,  Hiroshi Makino,  Yoshinobu Yamagami,  Toshikazu Suzuki,  Akinori Shibayama,  Shuhei Iwade,  

[Date]2003/8/15
[Paper #]SDM2003-141,ICD2003-74
Review of Recent Trend and Development of MOS Transistors

Toshihiro SUGII,  

[Date]2003/8/15
[Paper #]SDM2003-142,ICD2003-75
Sub-50-nm CMOS Device Technologies

Hitoshi WAKABAYASHI,  Kiyoshi TAKEUCHI,  Toyoji YAMAMOTO,  Tohru MOGAMI,  

[Date]2003/8/15
[Paper #]SDM2003-143,ICD2003-76
Thermal stability of HfO_2 gate dielectric film : Interfacial growth and silicidation

Noriyuki Miyata,  Manisha Kundu,  Masakazu Ichikawa,  Toshihide Nabatame,  Tsuyoshi Horikawa,  Akira Toriumi,  

[Date]2003/8/15
[Paper #]SDM2003-144,ICD2003-77
Design Guideline of HfSiON Gate Dielectrics for 65 nm CMOS Generation

Takeshi WATANABE,  Mariko TAKAYANAGI,  Ryosuke IIJIMA,  Kazunari ISHIMARU,  Yoshitaka TSUNASHIMA,  Hidemi ISHIUCHI,  

[Date]2003/8/15
[Paper #]SDM2003-145,ICD2003-78
Who should solve the problem of gate leakage current? : Discussion between circuit designer and device engineer

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[Date]2003/8/15
[Paper #]SDM2003-146,ICD2003-79
奥付

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[Date]2003/8/15
[Paper #]
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[Date]2003/8/15
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