Electronics-Silicon Devices and Materials(Date:2003/06/19)

Presentation
表紙

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[Date]2003/6/19
[Paper #]
目次

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[Date]2003/6/19
[Paper #]
Analysis of Stressed-Gate SiO_2 Films with Electron Injection by Conducting Atomic Force Microscopy : Microscopic observation for Degradation Mechanism of Gate SiO_2 Films

Akiyoshi Seko,  Yukihiko Watanabe,  Hiroki Kondo,  Akira Sakai,  Shigeaki Zaima,  Yukio Yasuda,  

[Date]2003/6/19
[Paper #]SDM2003-50
Determination of Energy Band Aligment for Y_2O_3/Si(100) System

Akio Ohta,  Masanori Yamaoka,  Hiroshi Nakagawa,  Hideki Murakami,  Seiichi Miyazaki,  

[Date]2003/6/19
[Paper #]SDM2003-51
On the Use of H_2O Oxidant Gas in MOCVD Growth of H_2O Films for Gate Insulator Applications

Eisuke TOKUMITSU,  Makoto NAKAYAMA,  Shiro HINO,  Kenji TAKAHASHI,  Hiroshi FUNAKUBO,  

[Date]2003/6/19
[Paper #]SDM2003-52
Fabrication of HfSiON Gate Dielectrics by Plasma Oxidation and Nitridation, Optimized for Low Power CMOS Applications

Seiji INUMIYA,  Katsuyuki SEKINE,  Shoko NIWA,  Akio KANEKO,  Motoyuki SATO,  Takeshi WATANABE,  Hironobu FUKUI,  Yoshiki KAMATA,  Masato KOYAMA,  Akira NISHIYAMA,  Mariko TAKAYANAGI,  Kazuhiro EGUCHI,  Yoshitaka TSUNASHIMA,  

[Date]2003/6/19
[Paper #]SDM2003-53
Annealing effect on ZrO_2 gate dielectrics

Hiroyuki Ishii,  Anri Nakajima,  

[Date]2003/6/19
[Paper #]SDM2003-54
Interface Structure of ZrO_2 Thin Film and Gate Insulator Film Prepared by Limited-Reaction Sputtering

Makoto YABUUCHI,  Kentaro KAWAI,  Yoshinari NAGATA,  Kimihiro SASAKI,  Tomonobu HATA,  

[Date]2003/6/19
[Paper #]SDM2003-55
Structural Characterization of Interfacial Oxide in Ultrathin ZrO_2/Si(100) System

Hiroshi Nakagawa,  Akio Ohta,  Fumito Takeno,  Satoru Nagamati,  Hideki Murakami,  Seiichi Miyazaki,  

[Date]2003/6/19
[Paper #]SDM2003-56
Low Temperature Formation of Ultra Thin Silicone Nitride Films Utilizing Activation Nitrogen

Takeshi OKAMOTO,  Takao IMAOKU,  Hiroshi YANO,  Tomoaki HATAYAMA,  Yukiharu URAOKA,  Takashi FUYUKI,  

[Date]2003/6/19
[Paper #]SDM2003-57
Thermal stability of Al_Ox:N/Si(100) interface

Fumito Takeno,  Hiroshi Nakagawa,  Akio Ohta,  Hideki Murakami,  Seiichi Miyazaki,  

[Date]2003/6/19
[Paper #]SDM2003-58
Influence of Nitrogen Profile on Mo Workfunction

Masaki Hino,  Takaaki AMADA,  Nobihide MAEDA,  Kentaro SHIBAHARA,  

[Date]2003/6/19
[Paper #]SDM2003-59
パルスレーザ蒸着(PLD)法による(Ba,Sr)TiO_3薄膜の作製における下部電極について(ゲート絶縁膜,容量膜,機能膜及びメモリ技術)

Kouhei ODA,  Itsuki NISHIYAMA,  Hiroyuki ETOH,  Naoto MIURA,  Taro ARAKAWA,  Nobuo HANEJl,  

[Date]2003/6/19
[Paper #]SDM2003-60
Influence of bottom electrode on BST electric characteristics

M Yamato,  T Kikkawa,  

[Date]2003/6/19
[Paper #]SDM2003-61
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[Date]2003/6/19
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[Date]2003/6/19
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