Electronics-Silicon Devices and Materials(Date:2003/04/08)

Presentation
表紙

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[Date]2003/4/8
[Paper #]
目次

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[Date]2003/4/8
[Paper #]
Material Research for Organic Electroluminescence Devices and a Preparation Method of Organic Thin films

Katsuhiko FUJITA,  Takamasa ISHIKAWA,  Takeshi YASUDA,  Tetsuo TSUTSUI,  

[Date]2003/4/8
[Paper #]ED2003-8,SDM2003-8,OME2003-8
Invited: Ink-Jet Printing of Polymer Thin Film Transistor

Takeo Kawase,  

[Date]2003/4/8
[Paper #]ED2003-9,SDM2003-9,OME2003-9
Orientation Control of Poly(di-methyl silane) Thin Film Prepared By Vacuum Evaporation Method

Hidetaka OHTA,  Shoji FURUKAWA,  

[Date]2003/4/8
[Paper #]ED2003-10,SDM2003-10,OME2003-10
Low Temperature Fabrication of High-Quality Insulating Films by Using ECR Plasma

Hiroshi NAKASHIMA,  Junli WANG,  Liwei ZHAO,  

[Date]2003/4/8
[Paper #]ED2003-11,SDM2003-11,OME2003-11
Characteristics of Laser Annealing for Amorphous Si Films Prepared by Catalytic Chemical Vapor Deposition and Application to Fabrication of Polycrystalline Si Thin-Film Transistors

Atsushi MASUDA,  Yusuke YOGORO,  Hideki MATSUMURA,  Kazuyuki MIYASHITA,  Tatsuya SHIMODA,  

[Date]2003/4/8
[Paper #]ED2003-12,SDM2003-12,OME2003-12
Behavior of Hydrogens in the poly-Si Film Prepaired by ELA Method : Relationship Between the Concentration of the Hydrogen Molecule in the SiN Film and Crystal growth

N. Kawamoto,  A. Masuda,  I. Hasegawa,  Anwar Bin Abd Aziz Fakhrul,  Y. Yogoro,  N. Matsuo,  K. Yamano,  H. Matsumura,  H. Hamada,  K. Shibata,  

[Date]2003/4/8
[Paper #]ED2003-13,SDM2003-13,OME2003-13
Growth of Clusters in Silane Plasmas and Their Relation to Deposition of Thin Films

M. SHIRATANI,  K. KOGA,  T. OGATA,  T. KAKEYA,  N. KAGUCHI,  Y. WATANABE,  

[Date]2003/4/8
[Paper #]ED2003-14,SDM2003-14,OME2003-14
Growth Characteristics of Si-Wire on Metal-Induced Lateral Crystallization

Kenji Makihira,  Tanemasa Asano,  

[Date]2003/4/8
[Paper #]ED2003-15,SDM2003-15,OME2003-15
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[Date]2003/4/8
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[Date]2003/4/8
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