Electronics-Silicon Devices and Materials(Date:2002/12/13)

Presentation
表紙

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[Date]2002/12/13
[Paper #]
目次

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[Date]2002/12/13
[Paper #]
Dependence of Temperature-Dependent Hole Concentration on Position of p-type Wafer within Polycrystalline Si Ingot for Solar Cells

Takuya ISHIDA,  Tomohiro KURODA,  Hideharu MATSUURA,  

[Date]2002/12/13
[Paper #]SDM2002-211
Analysis of p/n junction profiles by electron beam induced current towards high efficiency thin-film poly-Si solar cells

Tsutomu YAMAZAKI,  Yasuaki ISHIKAWA,  Yukiharu URAOKA,  Takashi FUYUKI,  

[Date]2002/12/13
[Paper #]SDM2002-212
Crystal Growth of polycrystalline Si Prepared by Excimer Laser Annealing : Considering the hydorogen and thermal conductivity of the substrate affect to the critical energy density

Naoya KAWAMOTO,  Naoto MATSUO,  Fakhrul Anwar Bin Abd Aziz,  Tomoyuki NOUDA,  Isao HASEGAWA,  Koji YAMANO,  Hiroki HAMADA,  

[Date]2002/12/13
[Paper #]SDM2002-213
Fabrication of Polycrystalline Si Thin Films utilizing Aluminum Induced Crystallization Layer

A. Nakamura,  Y. Ishikawa,  T. Hatayama,  H. Yano,  Y. Uraoka,  T. Fuyuki,  

[Date]2002/12/13
[Paper #]SDM2002-214
MD simulations of accumulation and desorption with low energy boron implantation

Takaaki AOKI,  Jiro MATSUO,  Gikan TAKAOKA,  

[Date]2002/12/13
[Paper #]SDM2002-215
Silicon nitride with low carbon concentration deposited by remote plasma CVD with organic liquid source

Kohshi TAGUCHI,  Masahiro YOSHIMOTO,  Junji SARAIE,  

[Date]2002/12/13
[Paper #]SDM2002-216
Formation of High-Quality Silicon Dioxide Films by Plasma Oxidation

Yunhua Sun,  Tsunenobu Kimoto,  Hiroyuki Matsunami,  

[Date]2002/12/13
[Paper #]SDM2002-217
Characterization of HfO_2 Film Fabricated by Reactive DC-Sputtering Method from viewpoints of HfO_2/SiO_2(100) interface. : Study of relation between formation of the interfacial layer and trap in the HfO_2 film

Hiroshi NOZAKI,  Shigenori HAYASHI,  Masayuki YAMAO,  Naoya KAWAMOTO,  Naoto MATUO,  Masaaki NIWA,  

[Date]2002/12/13
[Paper #]SDM2002-218
Electrical and Optical Properties of PrOχ Thin Film for High-k Gate Insulator

Takeshi KANASHIMA,  Masayuki SOHGAWA,  Koji IKEDA,  Hirofumi KANDA,  Masanori OKUYAMA,  

[Date]2002/12/13
[Paper #]SDM2002-219
Formation and Characterization of Ferroelectric Sr_2Nb_2O_7 Thin Film for MFMIS-FET Type Non-Volatile Memory

Yoshiaki NAKAO,  Yasuhiro SEKIMOTO,  Hideharu MATSUURA,  

[Date]2002/12/13
[Paper #]SDM2002-220
Fabrication of Bismuth Titanate Thin Films by Alternately Supplying MOD Method

Masaki Yamaguchi,  Yoichiro Masuda,  

[Date]2002/12/13
[Paper #]SDM2002-221
Sb Extension - Gate Overlap Control by Tilt Implantation

Nobuhide MAEDA,  Dai ONIMATSU,  Yoshinori ISHIKAWA,  Kentaro SHIBAHARA,  

[Date]2002/12/13
[Paper #]SDM2002-222
Reduction in Threshold Voltage Fluctuation by Super Steep Retrograde Channel Formation With Heavy Ion Implantation

Kentaro SHIBAHARA,  Daisuke NOTSU,  Dai ONIMATSU,  Nobuyuki KAWAKAMI,  

[Date]2002/12/13
[Paper #]SDM2002-223
n-channel Schottky Source/Drain SQI-MOSFET with Shallow Doped Extension

Sumie MATSUMOTO,  Mika NISHISAKA,  Tanemasa ASANO,  

[Date]2002/12/13
[Paper #]SDM2002-224
Proposal and Examination of New Type of TFT with Tunneling Dielectric Film at Both Ends of Channel

Hiroyuki Kihara,  Akinori Yamamoto,  Kenji Nakamura,  Naoto Matsuo,  

[Date]2002/12/13
[Paper #]SDM2002-225
Dependence of Light Intensity for Magnetoresistance Effect of Four-Terminal Si MOSFET Induced by Lateral Magnetic Field : Property of Four-Terminal MOSFET due to Light Irradiation and Magnetic Field

Shinya INOUE,  Koji MATSUNAGA,  Tadashi OHACHI,  Ichiro TANIGUCHI,  

[Date]2002/12/13
[Paper #]SDM2002-226
[OTHERS]

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[Date]2002/12/13
[Paper #]