Electronics-Silicon Devices and Materials(Date:2002/10/21)

Presentation
表紙

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[Date]2002/10/21
[Paper #]
目次

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[Date]2002/10/21
[Paper #]
[CATALOG]

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[Date]2002/10/21
[Paper #]
Device Reliability Degradation by Copper Contamination and its Mechanism in Semiconductor Process

K. Hozawa,  J. Yugami,  

[Date]2002/10/21
[Paper #]SDM2002-188
XPS study of H-terminated silicon surface annealed in non-oxidizing atmosphere

Kazumasa Kawase,  Kazutoshi Wakao,  Junji Tanimura,  Masao Inoue,  Hiroshi Umeda,  Hiroshi Kurokawa,  

[Date]2002/10/21
[Paper #]SDM2002-189
Study on Gate Insulator Formation Process with Radical Nitridation

M. Inoue,  Y. Maruyama,  K. Kawase,  H. Umeda,  Y. Ohno,  

[Date]2002/10/21
[Paper #]SDM2002-190
Influence of the noble gas atom contained in the plasma oxides and nitrides on the electrical properties

Masaaki Higuchi,  Tomoyuki Suwa,  Ichiro Ohshima,  Cheng Weitao,  Akinobu Teramoto,  Masaki Hirayama,  Shigetoshi Sugawa,  Tadahiro Ohmi,  

[Date]2002/10/21
[Paper #]SDM2002-191
Oxidation and Oxinitridation by using Vacume Ultra Violet light for Intrfacial layer formation

S. Aoyama,  M. Igeta,  H. Shinriki,  

[Date]2002/10/21
[Paper #]SDM2002-192
Reduction Effect of Flicker Noise by Atomic Scale Flattening Silicon Surface

Koutarou Tanaka,  Kazufumi Watanabe,  Hideaki Ishino,  Shigetoshi Sugawa,  Akinoubu Teramoto,  Masaki Hirayama,  Tadahiro Ohmi,  

[Date]2002/10/21
[Paper #]SDM2002-193
Electrical characteristics of ultra-thin gate oxide CMOS on (110) surface-oriented Si substrate

Momose Hisayo Sasaki,  Tatsuya Ohguro,  Kenji Kojima,  Shin-ichi Nakamura,  Yoshiaki Toyoshima,  

[Date]2002/10/21
[Paper #]SDM2002-194
The SCCO2 effect for ultra low-k dielectrics film modification : The SCCO2 process effect for the recovery of Etch/Ash damage

Takaaki MATSUOKA,  Dorel TOMA,  

[Date]2002/10/21
[Paper #]SDM2002-195
[OTHERS]

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[Date]2002/10/21
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