Electronics-Silicon Devices and Materials(Date:2002/05/16)

Presentation
表紙

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[Date]2002/5/16
[Paper #]
目次

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[Date]2002/5/16
[Paper #]
Realization of high-quality thick AlGaN layers and its device application

Motoaki IWAYA,  Tomoaki SANO,  Shinji TERAO,  Shingo MOCHIDUKI,  Sigekazu SANO,  Tetsuya NAKAMURA,  Satoshi KAMIYAMA,  Hiroshi AMANO,  Isamu AKASAKI,  

[Date]2002/5/16
[Paper #]SDM2002-13
Hight-Quality AlN Eptaxial film and GaN growth on the AlN/Sapphire Templates by MOVPE

Mitsuhiro Tanaka,  Tomohiko Shibata,  Masahiro Sakai,  Osamu Oda,  Hideto Miyake,  Kazumasa Hiramatsu,  Hiroyasu Ishikawa,  Takashi Egawa,  Takashi Jimbo,  

[Date]2002/5/16
[Paper #]SDM2002-14
Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

Yousuke Kuroiwa,  Yoshio Honda,  Masahito Yamaguchi,  Nobuhiko Sawaki,  

[Date]2002/5/16
[Paper #]SDM2002-15
ELO of GaN on a grooved Si substrate by MOVPE : Selected-area ELO of GaN on a Si substrate

Hiroyuki NAOI,  Mitsuhisa NARUKAWA,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  

[Date]2002/5/16
[Paper #]SDM2002-16
Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate

Norifumi KAMESHIRO,  Yoshio HONDA,  Masahito YAMAGUCHI,  Nobuhiko SAWAKI,  

[Date]2002/5/16
[Paper #]SDM2002-17
Growth of Polycrystalline GaN on ZnO/Si substrates by ECR-MBE

Tsutomu Araki,  Ken Kitamura,  Hisashi Mamiya,  Takahiro Maruyama,  Yasushi Nanishi,  

[Date]2002/5/16
[Paper #]SDM2002-18
Crystal Growth and Characterization of In_xGa_<1-x>N with High Indium Composition Grown by RF-MBE

M. Hori,  K. Kano,  T. Yamaguchi,  Y. Saito,  T. Araki,  Y. Nanishi,  

[Date]2002/5/16
[Paper #]SDM2002-19
Growth of (10-10) GaN on Sapphire Substrates by MOCVD

K. OKUNO,  K. OHTSUKA,  K. KUWAHARA,  M. SUMIYA,  Y. TAKANO,  S. Fuke,  

[Date]2002/5/16
[Paper #]SDM2002-20
Compositional inhomogeneity in buried structure of AlGaN

Tomoaki Sano,  Motoaki Iwaya,  Shinji Terao,  Shingo Mochizuki,  Tetuya Nakamura,  Satoshi Kamiyama,  Hiroshi Amano,  Isamu Akasaki,  

[Date]2002/5/16
[Paper #]SDM2002-21
MOVPE growth and characterization of AlGaN with high AlN molar fraction using epitaxial AlN/Sapphire substrate

Yoshihiro KIDA,  Tomohiko SHIBATA,  Hiroyuki NAOI,  Hideto MIYAKE,  Kazumasa HIRAMATSU,  Mitsuhiro TANAKA,  

[Date]2002/5/16
[Paper #]SDM2002-22
Electroluminescence in AlGaN/GaN HEMTs

Takeshi NAKAO,  Yutaka OHNO,  Mitsutoshi AKITA,  Shigeru KISHIMOTO,  Koichi MAEZAWA,  Takashi MIZUTANI,  

[Date]2002/5/16
[Paper #]SDM2002-23
Luminescence properties of Tb implanted GaN

Akihiro WAKAHARA,  Tetsutaka YAMAMOTO,  Yasuo NAKANISHI,  Akira YOSHIDA,  Takeshi OHSHIMA,  Hisayoshi ITOH,  

[Date]2002/5/16
[Paper #]SDM2002-24
Performance of UV-LED grown on Al_xGa_<1-x>N with low-dislocation density

Shun TAKANAMI,  Atsushi MIYAZAKI,  Shinji TERAO,  Motoaki IWAYA,  Satoshi KAMIYAMA,  Hiroshi AMANO,  Isamu AKASAKI,  

[Date]2002/5/16
[Paper #]SDM2002-25
Characterization of GaN based transparent Schottky barrier ultraviolet photodiode

K. Ohta,  H. Watanabe,  A. Motogaito,  K. Hiramatsu,  Y. Ohuchi,  I. Tadatomo,  Y. Hamamura,  S. Niisaka,  E. Shioya,  K. Fukui,  

[Date]2002/5/16
[Paper #]SDM2002-26
Fabrication of LED Based on III-V Nitride and its Applications

Naoki SHIBATA,  

[Date]2002/5/16
[Paper #]SDM2002-27
[OTHERS]

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[Date]2002/5/16
[Paper #]