Electronics-Silicon Devices and Materials(Date:2002/03/08)

Presentation
表紙

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[Date]2002/3/8
[Paper #]
目次

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[Date]2002/3/8
[Paper #]
Proposal and Analysis of A Novel Non-Volatile Ferroelectric Latch Circuit for Low Operation Voltage

Shuu'ichirou YAMAMOTO,  Susumu INOUE,  Hiroshi ISHIWARA,  

[Date]2002/3/8
[Paper #]SDM2001-262
Non-linear Model of FeRAM Reliability Including Depolarization Effect

Naoya Inoue,  Yoshihiro Hayahi,  

[Date]2002/3/8
[Paper #]SDM2001-263
TEM investigation of 90°domain structure of PZT thin films and related ferroelectric property

Takanori KIGUCHI,  Naoki WAKIYA,  Kazuo SHINOZAKI,  Nobuyasu MIZUTANI,  

[Date]2002/3/8
[Paper #]SDM2001-264
Propeity Design of Bi_4Ti_3O_12-based Thin Films Using Site-Engineering Concept

Hiroshi Funakubo,  Takayuki Watanabe,  Tomohiro Sakai,  Takashi Kojima,  Minoru Osada,  Yuji Noguchi,  Masaru Miyayama,  Takashi Iijima,  Hirofumi Matsuda,  Hiroshi Uchida,  Isao Okada,  

[Date]2002/3/8
[Paper #]SDM2001-265
Ferroelectric Properties of SrBi_2Ta_2O_9 Thin Films Deposited by RF Magnetron Sputtering

Tokuyuki NAKAYAMA,  Shoji TAKANASHI,  Yuji TAKATSUKA,  

[Date]2002/3/8
[Paper #]SDM2001-266
Imaging of Spontaneous Polarization in Bi-based Ferroelectric Thin Film by Scanning Force Microscopy

Desheng FU,  Kazuyuki SUZUKI,  Kazumi KATO,  

[Date]2002/3/8
[Paper #]SDM2001-267
[OTHERS]

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[Date]2002/3/8
[Paper #]