Electronics-Silicon Devices and Materials(Date:2002/03/07)

Presentation
表紙

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[Date]2002/3/7
[Paper #]
目次

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[Date]2002/3/7
[Paper #]
Preparation and characterization of a-and b-axes-oriented epitaxially grown Bi_4Ti_3O_12-based thin films

Takayuki WATANABE,  Hiroshi ISA,  Atsushi SASAKI,  Mamoru YOSHIMOTO,  Minoru OSADA,  Yuji NOGUCHI,  Masaru MIYAYAMA,  Keisuke SAITO,  Toshimasa SUZUKI,  Masayuki FUJIMOTO,  Hiroshi FUNAKUBO,  

[Date]2002/3/7
[Paper #]SDM2001-254
New PZT Crystallization Technique by Using Flash Lamp for FeRAM Devices

Koji Yamakawa,  Keitaro Imai,  Osamu Arisumi,  Tsunetoshi Arikado,  Masaki Yoshioka,  Tatsushi Owada,  Katsuya Okumura,  

[Date]2002/3/7
[Paper #]SDM2001-255
Low temperature growth of PZT thin films by MOCVD and effects of seeding

Mamoru Okaniwa,  Hironori Fujisawa,  Masaru Shimizu,  Hirohiko Niu,  

[Date]2002/3/7
[Paper #]SDM2001-256
Low Coercive Field of SrBi_2Ta_2O_9 by La-substitution and Vacancy Introduction : Control of Ferroelectric Properties through Defect Engineering

Masaru MIYAYAMA,  Yuji NOGUCHI,  

[Date]2002/3/7
[Paper #]SDM2001-257
Change of MFIS Characteristics by Bi_4Ti_3O_12 Thin Film Compositions

Masaki Yamaguchi,  Takao Nagatomo,  Yoichiro Masuda,  

[Date]2002/3/7
[Paper #]SDM2001-258
Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using (Bi, La)_4Ti_3O_12 and High Capacitance Buffer Layers

Takuya Suzuki,  Eisuke Tokumitsu,  

[Date]2002/3/7
[Paper #]SDM2001-259
1T2C-type Ferroelectric Memory

Satoru OGASAWARA,  Hiroshi ISHIWARA,  

[Date]2002/3/7
[Paper #]SDM2001-260
Trends of Embedded FRAM Technology

Seigen Otani,  Tooru Endo,  

[Date]2002/3/7
[Paper #]SDM2001-261
[OTHERS]

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[Date]2002/3/7
[Paper #]