Electronics-Silicon Devices and Materials(Date:2002/01/23)

Presentation
表紙

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[Date]2002/1/23
[Paper #]
目次

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[Date]2002/1/23
[Paper #]
A Majority-Logic Device Using a Balanced Pair of Single-Electron Boxes

Takahide OOYA,  Tetsuya ASAI,  Takashi FUKUI,  Yoshihito AMEMIYA,  

[Date]2002/1/23
[Paper #]2001-ED-245,2001-SDM-248
Hexagonal Quantum BDD Integrated Circuit Utilizing GaAs Schottky Wrap Gate Structures

Seiya KASAI,  Miki YUMOTO,  Hideki HASEGAWA,  

[Date]2002/1/23
[Paper #]2001-ED-246,2001-SDM-249
A Multiple-Valued Logic and Memory with Merged Single-Electron and MOS Transistors

Hiroshi INOKAWA,  Akira FUJIWARA,  Yasuo TAKAHASHI,  

[Date]2002/1/23
[Paper #]2001-ED-247,2001-SDM-250
Controlling gate-to-island coupling capacitance for elevated temperature operation of a multiple-valued memory using a single-electron transistor

Hiroshi SUNAMURA,  Hisao KAWAURA,  

[Date]2002/1/23
[Paper #]2001-DE-248,2001-SDM-251
Co-integration of Fluoride Based Resonant Tunneling Diodes and Si-MOSFETs

Toshiaki TERAYAMA,  Hiroshi SEKNE,  Kazuo TSUTSUI,  

[Date]2002/1/23
[Paper #]2001-ED-249,2001-SDM-252
A delta-sigma analog-to-digital converter using resonant tunneling diodes

Yuji YOKOYAMA,  Yutaka OHNO,  Shigeru KISHIMOTO,  Koichi MAEZAWA,  Takashi MIZUTANI,  

[Date]2002/1/23
[Paper #]2001-ED-250,2001-SDM-253
[OTHERS]

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[Date]2002/1/23
[Paper #]