Electronics-Silicon Devices and Materials(Date:2002/01/14)

Presentation
表紙

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[Date]2002/1/14
[Paper #]
目次

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[Date]2002/1/14
[Paper #]
Sub-50-nm Gate Length CMOS Technology and Supply-Voltage Optimization

Hitoshi Wakabayahi,  

[Date]2002/1/14
[Paper #]2001-SDM-205
Impact of Radical Oxynitridation on Characteristics & Reliability of Sub-1.5nm- Thick Gate-Dielectric FETs with Narrow Channel and Shallow Trench Isolation

Mitsuhiro Togo,  Koji Watanabe,  Masayuki Terat,  Toshinori Fukai,  Mitsuru Narihiro,  Koichi Aari,  Toyoji Yamamoto,  Toru Tatsumi,  Tohru Mogami,  

[Date]2002/1/14
[Paper #]2001-SDM-206
Non-uniform Boron Penetration through Nitrided Oxide in PMOSFETs

Takayuki Aoyama,  Hidenobu Fukutome,  Kunihiro Suzuki,  Hiroko Tashiro,  Yoko Tada,  Hiroshi Arimoto,  Kei Horiuchi,  Shigehiko Hasegawa,  Hisao Nakashima,  

[Date]2002/1/14
[Paper #]2001-SDM-207
Effects of Interface Oxide Layer on HfO_2 Gate Dielectrics

Yusuke Morisaki,  Yoshihiro Sugita,  Sergey Pidin,  Kiyoshi Irino,  Takayuki Aoyama,  

[Date]2002/1/14
[Paper #]2001-SDM-208
0.11 μm Fully-Depleted SOI CMOS Devices with 26nm Silicon Layer Fabricated by Bulk Compatible Process

H. Komatsu,  H. Nakayama,  K. Koyama,  K. Matsumoto,  T. Ohno,  K. Takeshita,  

[Date]2002/1/14
[Paper #]2001-SDM-209
Current Drivability Enhancement of Partially-Depleted SOI MOSFET by Body-Terminal-Controlled Capacitive-Coupling

Michiru Hogyoku,  

[Date]2002/1/14
[Paper #]2001-SDM-210
Study of self-heating influence on device performance of 0.1 μm SOI MOSFETs including velocity overshoot

S. Kawanaka,  K. Atsuzawa,  K. Noh,  Y. Katsumata,  M. Yoshimi,  H Ishiuchi,  

[Date]2002/1/14
[Paper #]2001-SDM-211
Argon Implantation Effects in SOI NMOSFET's

Tomoaki Shino,  Hideaki Nii,  Shigeru Kawanaka,  Kazumi Inoh,  Yasuhiro Katsumata,  Makoto Yoshimi,  Hidemi Ishiuchi,  

[Date]2002/1/14
[Paper #]2001-SDM-212
[OTHERS]

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[Date]2002/1/14
[Paper #]