IEICE Technical Committee

Electronics-Silicon Devices and Materials(Date:2001/12/13)

Presentation

表紙

[Date]2001/12/13
[Paper #]

[CATALOG]

[Date]2001/12/13
[Paper #]

The arrangement of metallo protein for the fabrication of nano columns

Gen Yamazaki, Yukiharu Uraoka, Takasi Fuyuki, Norihisa Mino, Ichirou Yamashita,

[Date]2001/12/13
[Paper #]SDM2001-183

Fabrication of nano-device using ferritin protein

T. Hikono, Y. Uraoka, T. Fuyuki, I. Yamashita,

[Date]2001/12/13
[Paper #]SDM2001-184

Preparation of PrO_X gate insulators using Pulsed Laser Deposition

S. Kitai, M. Sohgawa, H. Kanda, T. Kanashima, M. Okuyama,

[Date]2001/12/13
[Paper #]SDM2001-185

Effect of Bi Content on Physical Properties of Bi_4Ti_3O_<12>/Bi_2SiO_5/Si Structures

Masaki Yamaguchi, Takao Nagatomo, Yoichiro Masuda,

[Date]2001/12/13
[Paper #]SDM2001-186

Epitaxial Growth of Isotopically Pure Si Layer and Application to Si Self-Diffusion Study

Yukio NAKABAYASHI, Irwan Osman Hirman, Kazunari TOYONAGA, Kaori YOKOTA, Satoru MATSUMOTO, Junichi MUROTA, Kazumi WADA, Takao ABE,

[Date]2001/12/13
[Paper #]SDM2001-187

Surface Passivation of Silicon Substrates Using Quinhydrone/Methanol Treatment

Hidetaka TAKATO, Isao SAKATA, Ryuichi SHIMOKAWA,

[Date]2001/12/13
[Paper #]SDM2001-188

Electrical Properties and Structure of Silicon Oxide Nitrided by Thermal Oxynitridation or RPN

Masatoshi ARAI, Takahiko HASHIDZUME, Yoshinori ODAKE, Ichiro MATSUO,

[Date]2001/12/13
[Paper #]SDM2001-189

The Influence of Silicon Nitride Film on The Electrical Characteristics of MOS Capacitors

Hiroki SAKAMOTO, Hiroko KUBO, Yasuhiro KAWASAKI, Kenji YONEDA, Akira TAKEISHI,

[Date]2001/12/13
[Paper #]SDM2001-190

Reduction of Defect States and Improvement of SiO_2/Si Interface by High Pressure H_2O Vapor Treatment

Toshiyuki SAMESHIMA, Tadashi Watanabe, Nobuyuki ANDOH,

[Date]2001/12/13
[Paper #]SDM2001-191

Influence of Extension Formation Process on Indium Halo Profile

Kentaro Shibahara, Dai Onimatsu,

[Date]2001/12/13
[Paper #]SDM2001-192

Formation of Shallow p- and n-type Layers in Silicon by Diborane and Arsine Ion-Implanttion

K. Yokota, S. Nakase, K. Nakamura, M. Tanjou, K. Matsuda, H. Takano,

[Date]2001/12/13
[Paper #]SDM2001-193

Characteristics of SiGe Dynamic Threshold Voltage MOSFET(DTMOS)

A. Inoue, T. Takagi, Y. Hara, Y. Kanzawa, T. Kawashima, T. Ohnishi,

[Date]2001/12/13
[Paper #]SDM2001-194

Silicon Resonant Tunneling Metal-Oxide-Semiconductor Transistor for Sub-0.1μm Era

Takahiro NOZAKI, Naoto MATSUO, Yoshinori TAKAMI, Hiroki HAMADA,

[Date]2001/12/13
[Paper #]SDM2001-195

Design and Fabrication of SiC RESURF MOSFETs

Hajime Kosugi, Taichi Hirao, Hiroshi Yano, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami,

[Date]2001/12/13
[Paper #]SDM2001-196

Fabrication of SiC Super Junction Structure and Analysis of Electrical Characteristics for Power Devices

Mineo Miura, Shun-ichi Nakamura, Tsunenobu Kimoto, Jun Suda, Hiroyuki Matsunami,

[Date]2001/12/13
[Paper #]SDM2001-197

Crystal Growth of poly-Si using ELA method : Relationship between the nucleation and the hydrogens

Naoya KAWAMOTO, Hisashi ABE, Naoto MATSUO, Ryouhei TAGUCHI, Tomoyuki NOUDA, Hiroki HAMADA,

[Date]2001/12/13
[Paper #]SDM2001-198