Electronics-Silicon Devices and Materials(Date:2001/09/21)

Presentation
表紙

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[Date]2001/9/21
[Paper #]
目次

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[Date]2001/9/21
[Paper #]
Study on Non-Stationary Process in Silicon Oxide Film Growth by Simulations

Kenji Nanjo,  Yasumi Kotani,  Yasuhisa Omura,  

[Date]2001/9/21
[Paper #]VLD2001-73,SDM2001-147
Study of parameter extraction using genetic algorithm

Tetsunori WADA,  Takahisa KANEMURA,  

[Date]2001/9/21
[Paper #]VLD2001-74,SDM2001-148
A Dummy Pattern Design System Based on A CMP Model

Toshiyuki Ohta,  

[Date]2001/9/21
[Paper #]VLD2001-75,SDM2001-149
Oxidation Simulation in 3D Process Simulator HySyProS

Tetsuya UCHIDA,  Kaina SUZUKI,  Masahiro TAKENAKA,  Hideaki ISHIKAWA,  Sanae ITO,  Eiji TSUKUDA,  Hirotaka AMAKAWA,  Kenji NISHI,  

[Date]2001/9/21
[Paper #]VLD2001-76,SDM2001-150
Device Simulation Technique for Flash

Kazuya MATSUZAWA,  Takamitsu ISHIHARA,  Hiroaki HAZAMA,  

[Date]2001/9/21
[Paper #]VLD2001-77,SDM2001-151
A Simplified Model for Reverse Short Channel Effect on MOSFET : Application to Actual Devices

Hirokazu Hayashi,  Noriyuki Miura,  Hirotaka Komatsubara,  Marie Mochizuki,  Koichi Fukuda,  

[Date]2001/9/21
[Paper #]VLD2001-78,SDM2001-152
Wavepacket Approach for Quantum Transport Theory of Semiconductors

Masato MORIFUJI,  Minekazu ONO,  

[Date]2001/9/21
[Paper #]VLD2001-79,SDM2001-153
Monte Carlo Device Simulation Considering Quantum Corrected Forces

Hideaki TSUCHIYA,  Brian WINSTEAD,  Umberto RAVAIOLI,  

[Date]2001/9/21
[Paper #]VLD2001-80,SDM2001-154
Full-band Monte Carlo simulation for two-dimensional electron gas in SOI MOSFET

Hiroshi TAKEDA,  Nobuya MORI,  Chihiro HAMAGUCHI,  

[Date]2001/9/21
[Paper #]VLD2001-81,SDM2001-155
Pseudopotential Calculations for Band structure of Strained Si on Si_<1-x>Ge_x Substrates

Hiroshi NAKATSUJI,  Yoshinari KAMAKURA,  Kenji TANIGUCHI,  

[Date]2001/9/21
[Paper #]VLD2001-82,SDM2001-156
Effects of Long-Range Coulomb Potential Associated with Electron-Impurity Interaction on Electron Mobility in Impure Bulk Semiconductors

Takashi KURUSU,  Nabuyuki SANO,  Kazuya MATSUZAWA,  Akira HIROKI,  Noriaki NAKAYAMA,  

[Date]2001/9/21
[Paper #]VLD2001-83,SDM2001-157
Importance of Complex Band Models in Calculation of Direct Tunneling Current through Ultra-Thin Gate Oxides

Atsushi SAKAI,  Yoshinari KAMAKURA,  Masato MORIFUJI,  Kenji TANIGUCHI,  

[Date]2001/9/21
[Paper #]VLD2001-84,SDM2001-158
[OTHERS]

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[Date]2001/9/21
[Paper #]