Electronics-Silicon Devices and Materials(Date:2001/06/28)

Presentation
表紙

,  

[Date]2001/6/28
[Paper #]
CONTENTS

,  

[Date]2001/6/28
[Paper #]
Ni Germano-Salicide Technology for High Performance MOSFETs

Siyoung Choi,  J.-H. Ku,  C.-J. Choi,  K. Fujihara,  H.-K. Kang,  J.-T. Moon,  

[Date]2001/6/28
[Paper #]ED2001-52,SDM2001-59
A NEW CHEMICAL MECHANICAL POLISHING METHOD USING THE FROZEN ETCHANT PAD

Youn-Jin Oh,  Gyung-Soon Park,  Sung Yong Park,  Jae-Ok Ryu,  Tae Woo Jung,  Il-Wook Kim,  Chan-Hwa Chung,  

[Date]2001/6/28
[Paper #]ED2001-53,SDM2001-60
Nanoscale Poly-Si Line Formation and Its Uniformity

Woo Young Choi,  Suk Kang Sung,  Kyung Rok Kim,  Jong Duk Lee,  Byung-Gook Park,  

[Date]2001/6/28
[Paper #]ED2001-54,SDM2001-61
Low Temperature Nitridation of Si Oxide Utilizing Activated Nitrogen

Yukiharu Uraoka,  Kosuke Sasada,  Hiroshi Yano,  Tomoaki Hatayama,  T. Fuyuki,  

[Date]2001/6/28
[Paper #]ED2001-55,SDM2001-62
Influence of Silicon Wafer Loading Conditions on Thickness Uniformity of Sub-5nm-Thick Oxide Films

Markus Lenski,  Yasutaka Kimura,  Makoto Iwai,  Hiroshi Sakuraba,  Tetsuo Endoh,  Fujio Masuoka,  

[Date]2001/6/28
[Paper #]ED2001-56,SDM2001-63
Improved Oxide Etching by the Enhanced Inductively Coupled Plasma

S.-G. Park,  S.-B. Cho,  H.-Y. Song,  B.-H. O,  J.-S. Oh,  J.-W. Kim,  

[Date]2001/6/28
[Paper #]ED2001-57,SDM2001-64
Characteristics of SiO_2 films formed at low temperature by remote plasma oxidation

T. Iida,  M. Kanehiro,  T. Kimoto,  H. Matsunami,  

[Date]2001/6/28
[Paper #]ED2001-58,SDM2001-65
Effects of WSi_X-Polycide Gate Processes on MOSFET Reliability and Characteristics

Jin-Yang Kim,  Yong-Chul Oh,  Dong-Hyun Kim,  Kyu-Taek Hyun,  Hyoung-Woen Seo,  Dae-Joong Won,  Moon-Mo Jeong,  Yun-Jae Lee,  Yoon-Jae Man,  Sang-Hyun Lee,  Ho-Won Sun,  Se-Myeong Jang,  Chang-Huhn Lee,  Hyun-Chang Kim,  Chang-Kyu Kim,  Makoto Yoshida,  W Yang,  In-Ho Nam,  Gyo-Yong Jin,  Won-Seong Lee,  

[Date]2001/6/28
[Paper #]ED2001-59,SDM2001-66
Side-gate Length Optimization for 50nm Induced Source/Drain MOSFETs

Byung Yong Choi,  Woo Young Choi,  Young Jin Choi,  Jong Duk Lee,  Byung-Gook Park,  

[Date]2001/6/28
[Paper #]ED2001-60,SDM2001-67
Short Channel Effect on Variable Threshold Voltage CMOS(VTCMOS)

Hyunsik Im,  T. Inukai,  T. Saraya,  T. Sakurai,  T. Hiramoto,  

[Date]2001/6/28
[Paper #]ED2001-61,SDM2001-68
Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side

Hideki Murakami,  Tatsuyoshi Mihara,  Hiroki Yamashita,  Seiichi Miyazaki,  Masataka Hirose,  

[Date]2001/6/28
[Paper #]ED2001-62,SDM2001-69
A Thorough Study of Thin Gate Oxide Degradation during Fabrication of Advanced CMOSFET's

Jae-Sung Lee,  Heui-Gyun Ahn,  Won-Gyu Lee,  

[Date]2001/6/28
[Paper #]ED2001-63,SDM2001-70
Plasma-Wave Transistors and their Possible Terahertz Applications

Taiichi Otsuji,  

[Date]2001/6/28
[Paper #]ED2001-64,SDM2001-71
Atomic Layer Etching of Si(100) at Room Temperature

Bum J. Kim,  Sae H. Chung,  Sung M. Cho,  

[Date]2001/6/28
[Paper #]ED2001-65,SDM2001-72
A Formation and Characteristics of the Fluorinated Amorphous Carbon Films with Low Dielectric Constant by HDPCVD

Kyoung Suk Oh,  Kwang Man Lee,  Chi Kyu Choi,  

[Date]2001/6/28
[Paper #]ED2001-66,SDM2001-73
Metallic Mode Growth of ZrO_2-Based Thin Films for Gate Insulator Using Reactive Sputtering Technique

K. Sasaki,  T. Hasu,  K. Sasaki,  T. Hata,  

[Date]2001/6/28
[Paper #]ED2001-67,SDM2001-74
Structural and electrical properties of HfO_2/Hf-silicate/Si structures by rf magnetron sputtering

Geunhag Bae,  Hunjung Lee,  Donggeun Jung,  Hyeoksu Kang,  Yonghan Roh,  Cheol-Woong Yang,  

[Date]2001/6/28
[Paper #]ED2001-68,SDM2001-75
Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs

A. KOHNO,  M. IKEDA,  H. MURAKAMI,  S. MIYAZAKI,  M. HIROSE,  

[Date]2001/6/28
[Paper #]ED2001-69,SDM2001-76
12>> 1-20hit(22hit)