Electronics-Silicon Devices and Materials(Date:2001/06/01)

Presentation
表紙

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[Date]2001/6/1
[Paper #]
目次

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[Date]2001/6/1
[Paper #]
Low-Temperature Formation of High-k Gate Dielectric MIS Structure

Shin-Ichi Nakao,  Munekatsu Nakagawa,  Ichiro Ohshima,  Hiroyuki Shimada,  Tadahiro Ohmi,  

[Date]2001/6/1
[Paper #]SDM2001-53
New deposition technique of CVD-Ta_2O_5, ZrO_2 films for reducing surface roughness

T. Takahashi,  S. Aoyama,  H. Shinriki,  

[Date]2001/6/1
[Paper #]SDM2001-54
Energy Band Alignment and Energy Distribution of Electronic Defect States for ZrO_2/Si(100) Systems

M. Narasaki,  M. Ogasawara,  M. Yamaoka,  H. Murakami,  S. Miyazaki,  M. Hirose,  

[Date]2001/6/1
[Paper #]SDM2001-55
Preparation and Characterization of ZrO_2 high-k gate insulator films by PLD

Satoshi KITAI,  Masayuki SOUGAWA,  Hirofumi KANDA,  Takeshi KANASHIMA,  Masanori OKUYAMA,  

[Date]2001/6/1
[Paper #]SDM2001-56
Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition

Hiroya Ikeda,  Satoru Goto,  Kazutaka Honda,  Mitsuo Sakashita,  Akira Sakai,  Shigeaki Zaima,  Yukio Yasuda,  

[Date]2001/6/1
[Paper #]SDM2001-57
HfO_2 film deposition by MOCVD using Hf(NEt_2)_4 as a source gas

Y. Ohshita,  A. Ogura,  A. Hoshino,  T. Suzuki,  H. Machida,  

[Date]2001/6/1
[Paper #]SDM2001-58
[OTHERS]

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[Date]2001/6/1
[Paper #]