Electronics-Silicon Devices and Materials(Date:2001/05/18)

Presentation
表紙

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[Date]2001/5/18
[Paper #]
目次

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[Date]2001/5/18
[Paper #]
A technique of keeping off the oxidation of Mn evaporant during reactive evaporation

Masaaki Isai,  Takeyoshi Shimada,  Takaaki Matsui,  Hiroshi Fujiyasu,  

[Date]2001/5/18
[Paper #]ED2001-30,CPM2001-17,SDM2001-30
Formation and caracterization of polytetrafluoroethylene films deposited by synchrotron radiation

Eisuke Matsumoto,  Minoru Uchida,  Hiroshi Okada,  Akihiro Wakahara,  Akira Yoshida,  

[Date]2001/5/18
[Paper #]ED2001-31,CPM2001-18,SDN2001-31
Influence on Schottky contacts of sacrificial anodic oxidation for 6H-SiC

Masashi Kato,  Masaya Ichimura,  Eisuke Arai,  

[Date]2001/5/18
[Paper #]ED2001-32,CPM2001-19,SDM2001-32
MBE growth of GeC using arc plasma gun for a C molecular beam

Motoki Okinaka,  Ryoichi Dansho,  Yasumasa Hamana,  Takashi Tokuda,  Jun Ohta,  Masahiro Nunoshita,  

[Date]2001/5/18
[Paper #]ED2001-33,CPM2001-20,SDM2001-33
Buffered HF Etching Characteristics of Sil_<1-x-y>Ge_xC_y Epitaxial Films

Shoichi Ishida,  Mitsuo Miyamoto,  Yoshiaki Hashiba,  Takashi Matsuura,  Junichi Murota,  

[Date]2001/5/18
[Paper #]ED2001-34,CPM2001-21,SDM2001-34
Evaluation of MOS process under the environment without clean room by utilizing TEG

Ryouichi Tomida,  Atsushi Tsurumaru,  Yasuhiro Kawauti,  Takahiro Ikeno,  Hideo Uchida,  Masaya Ichimura,  Eisuke Arai,  

[Date]2001/5/18
[Paper #]ED2001-35,CPN2001-22,SDM2001-35
Investigation of Plasma induced damage on CMOS-ICs using atmospheric plasma cleaningequipment

Nobuyuki Takakura,  Takuji Keno,  Masaharu Yasuda,  Yasushi Sawada,  Yoshitami Inoue,  Kenji Taniguchi,  

[Date]2001/5/18
[Paper #]ED2001-36,CPM2001-23,SDM2001-36
Optimization of Simulation Parameters for Phosphorus and Boron Diffusion

Daisuke Iida,  Hiroshi Asai,  Hideo Uchida,  Masaya Ichimura,  Eisuke Arai,  

[Date]2001/5/18
[Paper #]ED2001-37,CPM2001-24,SDM2001-37
Detection and transfer of elementary charge in Si-wire MOS structures

A. Fujiwara,  Y. Takahashi,  

[Date]2001/5/18
[Paper #]ED2001-38,CPM2001-25,SDM2001-38
Fabrication and Proposition of High Sensitive Chemical Potential Sensor Used Charge Transfer Technique

Kazuaki Sawada,  Hidekuni Takao,  Makoto Ishida,  

[Date]2001/5/18
[Paper #]ED2001-39,CPM2001-26,SDM2001-39
Estimation of structure simulation in order to control the short channel effect in NMOSFET

Tadaoki Yamamoto,  Keigo Nakasima,  Kazuyuki Sibata,  Hideo Uchida,  Masaya Ichimura,  Eisuke Arai,  

[Date]2001/5/18
[Paper #]ED2001-40,CPM2001-27,SDM2001-40
Low frequency noise in Si_<1-x>Ge_x-channel pMOSFETs and its correlation with Si_<1-x>Ge_x/Si heterostructure quality

T. Tsuchiya,  T. Matsuura,  J. Murota,  

[Date]2001/5/18
[Paper #]ED2001-41,CPM2001-28,SDM2001-41
Dependence of Mechanism for Si SET with Oxidation-Induced Strain and Quantum-Mechanical Size Effect on Conduction Direction

Seiji Horiguchi,  Masao Nagase,  Kenji Shiraishi,  Hiroyuki Kageshima,  Yasuo Takahashi,  

[Date]2001/5/18
[Paper #]ED2001-42,CPM2001-29,SDM2001-42
Fabrication and characterization of Si quantum well structures

Takuma Ishihara,  Masanori Iwasaki,  Toshiaki Tsuchiya,  Yasuhiko Ishikawa,  Michiharu Tabe,  

[Date]2001/5/18
[Paper #]ED2001-43,CPM2001-30,SDM2001-43
[OTHERS]

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[Date]2001/5/18
[Paper #]