Electronics-Silicon Devices and Materials(Date:2001/04/12)

Presentation
表紙

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[Date]2001/4/12
[Paper #]
目次

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[Date]2001/4/12
[Paper #]
Possibilities of Poly-Si Thin-Film Transistors as Low Energy-Cost Electron Devices

Noriyoshi Yamauchi,  

[Date]2001/4/12
[Paper #]ED2001-1,SDM2001-1
Single-Grain Poly-Si TFT Fabricated on Poly-Si Films Prepared by Metal Imprint Technology

Kenji Makihira,  Masahito Yoshii,  Tanemasa Asano,  

[Date]2001/4/12
[Paper #]ED2001-2,SDM2001-2
Characteristics of Recrystallized poly-Si Film Prepared by ELA Deposited on SiN Film

Ryouhei TAGUCHI,  Hisashi ABE,  Naoya KAWAMOTO,  Naoto MATSUO,  Tomoyuki NOUDA,  Hiroki HAMADA,  

[Date]2001/4/12
[Paper #]ED2001-3,SDM2001-3
Fabrication of High Mobility poly-Si TFT by Cat-CVD Method

Hiroto Kasai,  Norihiro Kusumoto,  Hideo Yamanaka,  Hisayoshi Yamoto,  Takeshi Taniguchi,  Takeshige Ishida,  Kazuyuki Toyoda,  Yasuo Kunii,  

[Date]2001/4/12
[Paper #]ED2001-4,SDM2001-4
Thin-Film Transistors Fabricated by Catalytic Chemical Vapor Deposition Method

Masahiro Sakai,  Takayuki Tsutsumi,  Atsushi Masuda,  Hideki Matsumura,  

[Date]2001/4/12
[Paper #]ED2001-5,SDM2001-5
Hot Carrier Effects in Low-Temperature poly-Si p-ch TFTs under Dynamic Stress

N. Nagano,  T. Umeno,  Y. Uraoka,  T. Hatayama,  T. Fuyuki,  M. Furuta,  T. Kawamura,  Y. Tsuchihashi,  

[Date]2001/4/12
[Paper #]ED2001-6,SDM2001-6
[OTHERS]

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[Date]2001/4/12
[Paper #]