Electronics-Silicon Devices and Materials(Date:2001/03/06)

Presentation
表紙

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[Date]2001/3/6
[Paper #]
目次

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[Date]2001/3/6
[Paper #]
The formation of ruthenium electrodes by the chemical vapor deposition from a Ru(C_5H_4C_2H_5)_2 precursor dissolved in tetrahydrofurane

Y. Shimamoto,  M. Hiratani,  Y. Matsui,  T. Nabatame,  

[Date]2001/3/6
[Paper #]SDM2000-236
Low Temperature Preparation and Orientation Control of High Quality SrBi_2Ta_2O_9 Thin Films

Norimasa NUKAGA,  Masatoshi MITSUYA,  Hiroshi FUNAKUBO,  

[Date]2001/3/6
[Paper #]SDM2000-237
Preparation and Characterization of Pb(Mg_<1/3>Nb_<2/3>)O_3 Thin Film Capacitors

T. Nabatame,  T. Suzuki,  T. Okamoto,  S. Watahiki,  M. Ogihara,  M. Tanaka,  H. Matsuyama,  

[Date]2001/3/6
[Paper #]SDM2000-238
Degradation of Pt/PLZT/Pt Capacitors Caused by Hydroxyl Group in Interlayer Dielectrics

Kazufumi Suenaga,  Kiyoshi Ogata,  Hiromichi Waki,  Mitsuhiro Mori,  

[Date]2001/3/6
[Paper #]SDM2000-239
Morphotropic Phase Boundaries and Physical Properties

Y. Ishibashi,  

[Date]2001/3/6
[Paper #]SDM2000-240
[OTHERS]

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[Date]2001/3/6
[Paper #]