Electronics-Silicon Devices and Materials(Date:2000/10/12)

Presentation
表紙

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[Date]2000/10/12
[Paper #]
目次

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[Date]2000/10/12
[Paper #]
High-performance and Damage-free Plasma Etching Processes for Future ULSI Patterning

Seiji Samukawa,  

[Date]2000/10/12
[Paper #]SDM2000-142
Damage-free Contact Etching using Balanced Electron Drift Magnetron Plasma

Ryu Kaihara,  Masaki Hirayama,  Shigetoshi Sugawa,  Tadahiro Ohmi,  

[Date]2000/10/12
[Paper #]SDM2000-143
Breakdown Mechanism of Thin Gate Oxide Films

A. Teramoto,  M. Inoue,  H. Umeda,  Y. Ohno,  A. Nishimoto,  

[Date]2000/10/12
[Paper #]SDM2000-144
Hydrogen-free and Damage-free Nitridation of Si Substrate Using Atomic Nitrogen Radicals

Yoshihisa Fujisaki,  Hiroshi Ishiwara,  

[Date]2000/10/12
[Paper #]SDM2000-145
Improvement of SiO_2/Si interfaces prepared by radical oxygen process

Koji Usuda,  Makoto Nagamine,  Hitoshi Itoh,  Akira Toriumi,  

[Date]2000/10/12
[Paper #]SDM2000-146
Low Temperature Formation of Silicon Oxynitride Films by Microwave-Excited High-Density Kr/O_2/N_2 Plasma

Kazuo Ohtsubo,  Yuji Saito,  Katsuyuki Sekine,  Masaki Hirayama,  Shigetoshi Sugawa,  Herzl Aharoni,  Tadahiro Ohmi,  

[Date]2000/10/12
[Paper #]SDM2000-147
[OTHERS]

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[Date]2000/10/12
[Paper #]