Electronics-Silicon Devices and Materials(Date:2000/09/15)

Presentation
表紙

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[Date]2000/9/15
[Paper #]
目次

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[Date]2000/9/15
[Paper #]
Short Channel MOSFET Model

Kunihiro Suzuki,  

[Date]2000/9/15
[Paper #]VLD2000-57,SDM2000-130
Applying TCAD to MOSFET Process and Device Design

Hirotaka Komatsu,  Noriyuki Miura,  Hirokazu Hayashi,  Koichi Fukuda,  Tsukasa Yajima,  Masahiro Yoshida,  Keiichi Wakayama,  Akito Nishitani,  Yoshiki Nagatomo,  

[Date]2000/9/15
[Paper #]VLD2000-58,SDM2000-131
Design of 0.12um CMOS device using TCAD statistical simulation

Tmomoyuki Fukuda,  Atsushi Honzawa,  Shinichiro Wada,  Kazutaka Mori,  Hisako Sato,  Hisaaki Kunitomo,  

[Date]2000/9/15
[Paper #]VLD2000-59,SDM2000-132
Design Guideline and Performance Prediction of 'SBB' SOI MOSFETs

Shichio Funakoshi,  Mamoru Terauchi,  Kazuo Terada,  

[Date]2000/9/15
[Paper #]VLD2000-60,SDM2000-133
Improvements on Stability of 3-D Mesh Generation Based on Advancing Front Method

Katsuhiko Tanaka,  Akio Notsu,  Masami Hane,  

[Date]2000/9/15
[Paper #]VLD2000-61,SDM2000-134
Challenges on Modeling & Simulation for Sub-100nm Technology Node

Norihiko KOTANI,  

[Date]2000/9/15
[Paper #]VLD2000-62,SDM2000-135
Device Simulation with Quantum Effect by Density Gradient Method

Kazuya Matsuzawa,  Shin-ichi Takagi,  Mariko Takayanagi,  Hiroyoshi Tanimoto,  

[Date]2000/9/15
[Paper #]VLD2000-63,SDM2000-136
Quantum mechanical modeling and simulation using drift-diffusion

T. Hanajiri,  M. Niizato,  T. Toyabe,  T. Sugano,  A. Saito,  Y. Akagi,  

[Date]2000/9/15
[Paper #]VLD2000-64,SDM2000-137
Changed Charge Partitioning for sub-100nm MOSFET due to Ballistic Transport

T. Okagaki,  M. Tanaka,  H. Ueno,  M. Miura-Mattausch,  

[Date]2000/9/15
[Paper #]VLD2000-65,SDM2000-138
Effect of incomplete ionization of gate impurity and band-gap narrowing on tunneling current from the gate

H. Watanabe,  S. Takagi,  

[Date]2000/9/15
[Paper #]VLD2000-66,SDM2000-139
Percolation Simulation for Dielectric Breakdown of Ultra-thin Silicon Dioxides Incorporating the non-Gaussian Hole Transport

T. Ezaki,  T. Yamamoto,  H. Nakasato,  M. Hane,  

[Date]2000/9/15
[Paper #]VLD2000-67,SDM2000-140
Experimental and Simulation-Based Consideration on Relationship Between Current-Stress Condition and SILC Characteristics

Kenji Komiya,  Yasuhisa Omura,  

[Date]2000/9/15
[Paper #]VLD2000-68,SDM2000-141
[OTHERS]

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[Date]2000/9/15
[Paper #]