Electronics-Silicon Devices and Materials(Date:2000/06/22)

Presentation
表紙

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[Date]2000/6/22
[Paper #]
目次

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[Date]2000/6/22
[Paper #]
ED2000-61 / SDM2000-61 High-frequency AlGaN/GaN heterostructure FETs

K. Inoue,  Y. Ikeda,  H. Masato,  T. Matsuno,  K. Nishii,  

[Date]2000/6/22
[Paper #]ED2000-61,SDM2000-61
ED2000-62 / SDM2000-62 Extraction of GaAs/InGaP HBT Small-Signal Equivalent Circuit Based on a Genetic Algorithm

D.S. Chang,  M.K. Rhee,  J.S. Moon,  K.S. Yoon,  C.S. Park,  

[Date]2000/6/22
[Paper #]ED2000-62,SDM2000-62
ED2000-63 / SDM2000-63 A New Cold PHEMT Equivalent Circuit for Extracting Extrinsic Resistance

D.S. Park,  H.C. Cho,  Y.S. Chae,  J.K. Rhee,  

[Date]2000/6/22
[Paper #]ED2000-63,SDM2000-63
ED2000-64 / SDM2000-64 Effects of He gas on hydrogen content and passivation of GaAs PHEMT with SiN films

J.W. Shin,  Y.S. Yoon,  S.D. Lee,  H.C. Park,  J.K. Rhee,  

[Date]2000/6/22
[Paper #]ED2000-64,SDM2000-64
ED2000-65 / SDM2000-65 Optical control of p-channel MODFET

H.J. Kim,  I.K. Han,  J.I. Lee,  D.M. Kim,  

[Date]2000/6/22
[Paper #]ED2000-65,SDM2000-65
ED2000-66 / SDM2000-66 Improvement of Memory windows in YMnO_3/Si Ferroelectric Gate FET

Yong Tae Kim,  Ik-Soo Kim,  Young K Park,  

[Date]2000/6/22
[Paper #]ED2000-66,SDM2000-66
ED2000-67 / SDM2000-67 Optimization of Device Parameters for Ferroelectric-Gate FETs Using SrBi_2Ta_2O_9 and SrTa_2O_6/SiON Buffer Layer

Eisuke Tokumitsu,  Kojiro Okamoto,  Hiroshi Ishiwara,  

[Date]2000/6/22
[Paper #]ED2000-67,SDM2000-67
ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method

Kwang-Ho Kim,  Yong-Seong Kim,  Soon-Won Jung,  Jin-Kyu Kim,  Nam-Yeal Lee,  Sang Hyun Jeong,  Byung-Gon Yu,  Won-Jae Lee,  In Kyu You,  Yil-Suk Yang,  

[Date]2000/6/22
[Paper #]ED2000-68,SDM2000-68
ED2000-69 / SDM2000-69 Ferroelectric Sputtering Technology for High-volume Ferroelectric Memory Production

Koukou Suu,  Yusuke Miyaguchi,  T. Masuda,  Y. Nishioka,  Fan Chu,  

[Date]2000/6/22
[Paper #]ED2000-69,SDM2000-69
ED2000-70 / SDM2000-70 Plasma-MOCVD derived SrBi_2Ta_2O_9 capacitors for low voltage operation

B.K. Moon,  K. Hironaka,  C. Isobe,  T. Nishihara,  S. Hishikawa,  

[Date]2000/6/22
[Paper #]ED2000-70,SDM2000-70
ED2000-71 / SDM2000-71 SiGe HBT Technology and Applications for Communication

Byung Ryul Ryum,  Deok-Ho Cho,  Tae-Hyun Han,  Soo-Min Lee,  Seung-Ho Lee,  Young-Hyun Kim,  Kyung-Sik Baek,  Suk-Chan Song,  Gil-Jae Lee,  Kyung-Jun Eo,  Chang-Uk Kim,  

[Date]2000/6/22
[Paper #]ED2000-71,SDM2000-71
ED2000-72 / SDM2000-72 Non-Self-Aligned InP/InGaAs HBT Technology and Its Application to High-Speed Digital ICs

Hiroki Nakajima,  Eiichi Sano,  Minoru Ida,  Shoji Yamamahata,  

[Date]2000/6/22
[Paper #]ED2000-72,SDM2000-72
ED2000-73 / SDM2000-73 A Flip-Chip Packaged GaAs Switch IC Using 0.2 μm-Gate MODFET

Kazuo Miyatsuji,  Satoshi Makioka,  Hidetoshi Ishida,  Daisuke Ueda,  

[Date]2000/6/22
[Paper #]ED2000-73,SDM2000-73
ED2000-74 / SDM2000-74 PHEMT Super Low Noise MMIC Amplifier for 5.8 GHz HIPER LAN Applications

B.G. Choi,  Y.S. Lee,  C.S. Park,  K.S. Yoon,  

[Date]2000/6/22
[Paper #]ED2000-74,SDM2000-74
ED2000-75 / SDM2000-75 High Performance MMIC Power Amplifier for BWLL Applications

H.C. Bae,  J.S. Yoon,  D. An,  H.M. Park,  J.K. Rhee,  

[Date]2000/6/22
[Paper #]ED2000-75,SDM2000-75
[OTHERS]

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[Date]2000/6/22
[Paper #]