Electronics-Silicon Devices and Materials(Date:2000/05/12)

Presentation
表紙

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[Date]2000/5/12
[Paper #]
目次

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[Date]2000/5/12
[Paper #]
Fabrication zinc oxide thin films by reactive sihilded vacuum arc ion plating

Keisaku Kimura,  Ryuichi Miyano,  Hirofumi Takikawa,  Tateki Sakakibara,  

[Date]2000/5/12
[Paper #]ED2000-29,CPM2000-14,SDM2000-29
Conductivity type control of ZnO

Nuttawuth Buthrath,  Arun Vir Singh,  Yoshihito Hiroe,  Akihiro Wakahara,  Akira Yoshida,  

[Date]2000/5/12
[Paper #]ED2000-30,CPM2000-15,SDM2000-30
Theoretical analysis of band structure of strained β-FeSi_2

Kenji Tsuchiya,  Xiaoping Wu,  Akihiro Wakahara,  Akira Yoshida,  

[Date]2000/5/12
[Paper #]ED2000-31,CPM2000-16,SDM2000-31
Growth of CuGaS_2 with buried SiO_2 structure by Epitaxial lateral overgrowth

Akimitsu Ikeda,  Masanori Hibi,  Hideto Miyake,  Kazumasa Hiramatsu,  

[Date]2000/5/12
[Paper #]ED2000-32,CPM2000-17,SDM2000-32
Growth characteristics of CdS layers on(100)GaAs by metalorganic vapor phase epitaxy

H.B. Samion,  Yasumitsu Tomita,  Yusuke Masuda,  Kazuhito Yasuda,  

[Date]2000/5/12
[Paper #]ED2000-33,CPM2000-18,SDM2000-33
Development of Room Temperature, High-Resolution Detector for High-energy radiation

A. Nakamura,  D. Noda,  T. Aoki,  Y. Hatanaka,  

[Date]2000/5/12
[Paper #]ED2000-34,CPM2000-19,SDM2000-34
Etching of silicon related materials using trifluoro-athetyl-fluoride gas

Yoji Saito,  Hirofumi Yamazaki,  Isamu Mouri,  

[Date]2000/5/12
[Paper #]ED2000-35,CPM2000-20,SDM2000-35
Surface nitridation process of silicon dioxide by fluorine and excited nitrogen treatment(2)

Koichi Tokuda,  Tatsuya Ibe,  Yoji Saito,  

[Date]2000/5/12
[Paper #]ED2000-36,CPM2000-21,SDM2000-36
Industry growth process of nitrogen at oxynitridation, and effect to the composition of film

Akira Kawasaki,  Masayuki Suzuki,  Yoji Saito,  

[Date]2000/5/12
[Paper #]ED2000-37,CPM2000-22,SDM2000-37
SiC thin films deposition by plasma CVD

H. Nonaka,  T. Muramatsu,  Y. Xu,  H. Anma,  T. Aoki,  Y. Hatanaka,  

[Date]2000/5/12
[Paper #]ED2000-38,CPM2000-23,SDM2000-38
Pseudo-binary phase diagram and crystal growth of Y_yNd_<1-y>Ba_2Cu_3O_x

T. Mori,  D.K. Aswal,  T. Koyama,  M. Kumagawa,  Y. Hayakawa,  

[Date]2000/5/12
[Paper #]ED2000-39,CPM2000-24,SDM2000-39
Photoluminescence spectroscopy of resonant tunneling through InAs self-assembled quantum dots

Yutaka Ohno,  Shigeru Kishimoto,  Koichi Maezawa,  Takashi Mizutani,  

[Date]2000/5/12
[Paper #]ED2000-40,CPM2000-25,SDM2000-40
Growth of InGaAs layer on GaAs off substrates by metal organic chemical vapor deposition

M. Masuda,  K. Kuwahara,  S. Fuke,  Y. Takano,  

[Date]2000/5/12
[Paper #]ED2000-41,CPM2000-26,SDM2000-41
Growth of InGaSb under Reduced Gravity using an Airplane and 1G conditions

T. Nakamura,  Y. Hayakawa,  K. Balakrishnan,  N. Shibata,  H. Komatsu,  N. Murakami,  T. Yamada,  D. Krishnamurthy,  T. Koyama,  M. Miyazawa,  M. Kumagawa,  

[Date]2000/5/12
[Paper #]ED2000-42,CPM2000-27,SDM2000-42
Study on the LPE growth of InGaAs pyramidal layers on(100)GaAs substrates

K. Balakrishnan,  S. Iida,  T. Koyama,  M. Kumagawa,  Y. Hayakawa,  

[Date]2000/5/12
[Paper #]ED2000-43,CPM2000-28,SDM2000-43
[OTHERS]

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[Date]2000/5/12
[Paper #]