Electronics-Silicon Devices and Materials(Date:1999/09/27)

Presentation
表紙

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[Date]1999/9/27
[Paper #]
目次

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[Date]1999/9/27
[Paper #]
Improvement of deposition rate in Aluminum-CVD using Direct Liquid Injection System

T. Nishimura,  C. H. Lee,  K. Masu,  K. Tsubouchi,  

[Date]1999/9/27
[Paper #]SDM99-139
Initial Reaction in Low-Temperature Selective Growth of W on the Si Surface Using WF_6 and SiH_4 Gases

Yuji Yamamoto,  Takashi Matsuura,  Junichi Murota,  

[Date]1999/9/27
[Paper #]SDM99-140
Atomic-layer adsorption of P on Si(100) and Ge(100) by PH_3 using an ultraclean LPCVD

Yosuke SHIMAMUNE,  Masao SAKURABA,  Takashi MATSUURA,  Junichi MUROTA,  

[Date]1999/9/27
[Paper #]SDM99-141
Hydrogen adsorption and desorption processes on SiGe surface investigated by in-situ infrared absorption spectroscopy

Daisei Shoji,  Masanori Shinohara,  Fumihiko Hirose,  Hitoshi Sakamoto,  Michio Niwano,  

[Date]1999/9/27
[Paper #]SDM99-142
Infrared observation of etching process of silicon surface controlling electrode potential

Yasuo Kimura,  Yusuke Kondoh,  Michio Niwano,  

[Date]1999/9/27
[Paper #]SDM99-143
Quantum Chemical Study on Surface Reactions of Diamond and Silicon

Hiroyuki Tamura,  Hui Zhou,  Seiichi Takami,  Momoji Kubo,  Akira Miyamoto,  

[Date]1999/9/27
[Paper #]SDM99-144
Room Temperature Photoresist Stripping Technology by using Megasonic

Senri Ojima,  Takayuki Jizaimaru,  Shunkichi Omae,  Tadahiro Ohmi,  

[Date]1999/9/27
[Paper #]SDM99-145
Influence of residual solvent and substrate acidity on chemically amplified resist process

Minoru Watanabe,  Sachiko Yabe,  Satoshi Machida,  Takashi Taguchi,  

[Date]1999/9/27
[Paper #]SDM99-146
[OTHERS]

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[Date]1999/9/27
[Paper #]