Electronics-Silicon Devices and Materials(Date:1999/08/26)

Presentation
表紙

,  

[Date]1999/8/26
[Paper #]
目次

,  

[Date]1999/8/26
[Paper #]
Quantum Device Simulation of Ujtrasmalj MOSFET

Hideaki Tsuchiya,  Tanroku Miyoshi,  

[Date]1999/8/26
[Paper #]SDM99-119
An Efficient Method for Monte Carlo Ion Implantation Simulation

takahisa kanemura,  

[Date]1999/8/26
[Paper #]SDM99-120
Simulation of FN Tunneling Currents Including Realistic Structure of Gate Electrode

K. Matsuzawa,  H. Hazama,  H. Tanimoto,  

[Date]1999/8/26
[Paper #]SDM99-121
Anomalous Current Analysis in Memory Cells of Dynamic Random Access Memories (DRAM's) by Device Simulation

Ken Yamaguchi,  Tatsuya Teshima,  Hiroshi Mizuta,  

[Date]1999/8/26
[Paper #]SDM99-122
Calibration method for HDP-CVD simulation

S. Kinoshita,  H. Kawaguchi,   N. Shigyo,  

[Date]1999/8/26
[Paper #]SDM99-123
Novel Method of Mesh Handling in Two Dimensional Process Simulation.

Toshikazu Fukuda,  

[Date]1999/8/26
[Paper #]SDM99-124
Simulation for degradation of flash memory due to hole-induced charge traps in the tunnel oxide

Ayumi Yokozawa,  Takuya Kitamura,  Masato Kawata,  

[Date]1999/8/26
[Paper #]SDM99-125
Suppression of self-interstitial diffusion due to carbon

Hiroyuki Kobayashi,  Ryangsu Kim,  Jianxin Xia,  Tomoya Saito,  Yosinari Kamakura,  Kenji Taniguchi,  

[Date]1999/8/26
[Paper #]SDM99-126
[OTHERS]

,  

[Date]1999/8/26
[Paper #]