Electronics-Silicon Devices and Materials(Date:1999/03/10)

Presentation
表紙

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[Date]1999/3/10
[Paper #]
目次

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[Date]1999/3/10
[Paper #]
High Performance Electrically Induced Body Dynamic Threshold MOSFET (EIB-DTMOS) with Large Body Effect

Makoto Takamiya,  Toshiro Hiramoto,  

[Date]1999/3/10
[Paper #]SDM98-210
Influence of Dopant Distribution to the Electrical Characteristics on the SOI Device

T. Ishiyama,  S. Matsumoto,  T. Yachi,  

[Date]1999/3/10
[Paper #]SDM98-211
A Lateral BJT on SOI Using Self-Aligned External Base Formation Technology

T. Shino,  K. Inoh,  T. Yamada,  H. Nii,  S. Kawanaka,  T. Fuse,  M. Yoshimi,  Y. Katsumata,  S. Watanabe,  J. Matsunaga,  

[Date]1999/3/10
[Paper #]SDM98-212
PtSi Schottky Source/Drain SOI-MOSFET

Yasuhiro Ochiai,  Tanemasa Asano,  

[Date]1999/3/10
[Paper #]SDM98-213
Electric characteristics of 1200V device using SOI wafer which inserted SIPOS film

Keizo Hirayama,  Yoshihiro Yamaguchi,  Hideyuki Funaki,  Akio Nakagawa,  

[Date]1999/3/10
[Paper #]SDM98-214
Development Trend of MOS Gate Power Devices

Kenya Sakurai,  

[Date]1999/3/10
[Paper #]SDM98-215
Recent works and prospect of SOI CMOS

Toshiaki TSUCHIYA,  

[Date]1999/3/10
[Paper #]SDM98-216
Dielectric Breakdown Mechanism of SiO_2 by Resistance Distribution Analysis after Breakdown

Hideki Satake,  Akira Toriumi,  

[Date]1999/3/10
[Paper #]SDM98-217
Gate Oxide Degradation by Charging Damage During the Contact etching

Tetsuya OHNISHI,  Yoshinori HIGAMI,  Atsushi KAGISAWA,  

[Date]1999/3/10
[Paper #]SDM98-218
Suppression of the Floating-Body Effect in Fully-Depleted nMOSFET's/SIMOX Using Back-Side Bias-Temperature Treatment

H. Koizumi,  M. Shimaya,  T. Tsuchiya,  

[Date]1999/3/10
[Paper #]SDM98-219
Insulator thickness dependence on total dose effect of MNOS structure

T. Fujimaki,  K. Ohnishi,  Y. Takahashi,  M. Yoshikawa,  

[Date]1999/3/10
[Paper #]SDM98-220
Feasibnity Study of SOI-MOSFET for Photoreceiver Application

Hiroyuki Nakamura,  Tanemasa Asano,  

[Date]1999/3/10
[Paper #]SDM98-221
Effect of tantalum reactions with gate oxide on performance and reliability of tantalumgate MOS devices

Kunihiro Kawai,  Takeo Ushiki,  Ichiro 0hshima,  Tadahiro Ohmi,  

[Date]1999/3/10
[Paper #]SDM98-222
[OTHERS]

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[Date]1999/3/10
[Paper #]