Electronics-Silicon Devices and Materials(Date:1998/04/24)

Presentation
表紙

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[Date]1998/4/24
[Paper #]
目次

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[Date]1998/4/24
[Paper #]
Vertical Sub-100nm MOSFETs

Hansch W,  

[Date]1998/4/24
[Paper #]
Fabrication and characterization of 14-nm-gate-length EJ-MOSFETs

Hisao Kawaura,  Toshitsugu Sakamoto,  Yukinori Ochiai,  Jun'ichi Fujita,  Toshio Baba,  

[Date]1998/4/24
[Paper #]
1.5 nm gate oxide MOSFETs

Hisayo Momose,  Shin-ichi Nakamura,  Yasuhiro Katsumata,  Hiroshi Iwai,  

[Date]1998/4/24
[Paper #]
Characteristics of Deep Sub-micron MOSFETs with N_2O-Oxynitride Gate Dielectrics

Mariko Takagi-Takayanagi,  Hisao Yoshimura,  Yoshiaki Toyoshima,  

[Date]1998/4/24
[Paper #]
Impact of Shallow Source/Drain on the Characteristics of Short Channel pMOSFETs

Hajime Kurata,  Toshihiro Sugii,  

[Date]1998/4/24
[Paper #]
『Shallow Source/Drain Extensions for pMOSFETs with High Activation and Low Process Damage Fabricated by Plasma Doping』

Michihiko TAKASE,  Kyoji YAMASHITA,  Atsushi HORI,  Bunji MIZUNO,  

[Date]1998/4/24
[Paper #]
Vertically Non-uniform Channel Doping for the Suppression of MOSFET Threshold Voltage Fluctuation

Kiyoshi Takeuchi,  Toru Tatsumi,  Akio Furukawa,  

[Date]1998/4/24
[Paper #]
Fabrication and Characterization of a Novel Si Interband Tunneling Diode

K Morita,  K Morimoto,  H Sorada,  S Yoshii,  K Yuki,  T Uenoyama,  K Ohnaka,  

[Date]1998/4/24
[Paper #]
Josephson tunneling through natural barrier layers in high-T_c superconductive thin films

Akihiro Odagawa,  Masahiro Sakai,  Hideaki Adachi,  Kentaro Setsune,  

[Date]1998/4/24
[Paper #]
[OTHERS]

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[Date]1998/4/24
[Paper #]