Electronics-Silicon Devices and Materials(Date:1998/02/19)

Presentation
表紙

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[Date]1998/2/19
[Paper #]
目次

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[Date]1998/2/19
[Paper #]
A Fully Depleted Thin-film SOI Power MOSFET

Satoshi Matsumoto,  Toshiaki Yachi,  

[Date]1998/2/19
[Paper #]
A Gate-Array LSI using 0.25μm ultra-thin-film fully depleted CMOS/SIMOX with W-covered source/darin

Yasuhiro Sato,  Toshihiko Kosugi,  Yuichi Kado,  Toshiaki Tsuchiya,  Terukazu Ohno,  Hiromu Ishii,  Kazuyoshi Nishimura,  

[Date]1998/2/19
[Paper #]
Improvement of Reverce Recovery Characteristics in Lateral SOI Diodes with Various Anode Structures

Shinji Nobuto,  Kiyoto Watabe,  Hajime Akiyama,  Shiro Hine,  

[Date]1998/2/19
[Paper #]
Reverse recovery characteristics of SOI lateral high speed diodes

Keizo Hirayama,  Hideyuki Funaki,  Yoshihiro Yamaguchi,  Akio Nakagawa,  

[Date]1998/2/19
[Paper #]
3-Dimensional Simulation of Turn-off Current in Partially Depleted SOI MOSFETs

Takahide Ikeda,  Hisayuki Higuchi,  Yasuyuki Ohkura,  Shoji Wakahara,  

[Date]1998/2/19
[Paper #]
New Measurement Technique for Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs

Takuya SARAYA,  Makoto TAKAMIYA,  Ngoc DUYET Tran,  Toshiro HIRAMOTO,  

[Date]1998/2/19
[Paper #]
On the Degradation Mechanisms of Thin SiO_2 under Fowler-Nordheim Electron Injection

Hideki Satake,  Akira Toriumi,  

[Date]1998/2/19
[Paper #]
Study of Anomalous Leakage Current in Thin Film SOI MOSFETs

S. Kawanaka,  S. Onga,  T. Okada,  T. Shino,  Yamada T. /,  M. Yoshimi,  S. Watanabe,  

[Date]1998/2/19
[Paper #]
Measurement of Collected Charge Induced by Heavy Ion Microbeam in SOI Devices.

Toshio Hirao,  Noboru Shiono,  Hiroshi Anayama,  Norio Nemoto,  Isamu Nashiyama,  Kazunori Ohnishi,  Sumio Matsuda,  

[Date]1998/2/19
[Paper #]
Breakdown Mechanism of Gate Oxide by Process Charging in SOI Wafers

Daizo URABE,  Takashi UEDA,  Tetuya OHNISHI,  Toshio NAKA,  Alberto O. ADAN,  Atsushi KAGISAWA,  

[Date]1998/2/19
[Paper #]
Preparation of Submicron nMOSFETs with Ta2O5/SiO2 Gate Insulator

Youichi Momiyama,  Hiroshi Minakata,  Toshihiro Sugii,  

[Date]1998/2/19
[Paper #]
Evidence of Electron-Hole Cooperation in Silicondioxide (SiO_2) Dielectric Breakdown

Hideki Satake,  Shin・ichi Takagi,  Akira Toriumi,  

[Date]1998/2/19
[Paper #]
Plasm Induced Damage of Gate SiO_2 during Sputtering Process

Kunihiro Kawai,  Takeo Ushiki,  Mo-Chiun Yu,  Toshikuni Shinohara,  Muzuho Morita,  Tadahiro Ohmi,  

[Date]1998/2/19
[Paper #]
[OTHERS]

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[Date]1998/2/19
[Paper #]