Electronics-Silicon Devices and Materials(Date:1997/08/25)

Presentation
表紙

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[Date]1997/8/25
[Paper #]
目次

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[Date]1997/8/25
[Paper #]
Time-Dependent Oxide Breakdown Mechanism and Quantum Physical Chemistry

Mikihiro Kimura,  

[Date]1997/8/25
[Paper #]SDM97-82
Dtissolution and Adsorption of W and Ti on Si Surface in Cleaning Solutions

T. Wake,  K. Yamamoto,  U. Hase,  M. Tsuji,  H. Aoki,  N. Aoto,  

[Date]1997/8/25
[Paper #]SDM97-83
Hydrogen Termination of Si(100) Surfaces by BHF Treatments

T. Osada,  Y. Kawazawa,  S. Ishida,  M. Miyamoto,  S. Miyazaki,  M. Hirose,  

[Date]1997/8/25
[Paper #]SDM97-84
In-situ IR study of hydrogen adsorption and desorption on Si surface

Junko Kuge,  Miyako Terashi,  Michio Niwano,  

[Date]1997/8/25
[Paper #]SDM97-85
Chemistry of Si surface in water : Oxidaion and hydrogen exchange

Michio Niwano,  Shin-ich Tadokoro,  Nobuo Miyamoto,  

[Date]1997/8/25
[Paper #]SDM97-86
Evaluation of chemical solutions by non-destructive detection meter

Kiyotaka Tozuka,  Masayuki Toda,  Hiroshi Shirai,  Katuo Ehara,  Yasuyuki Harada,  

[Date]1997/8/25
[Paper #]SDM97-87
UV/Cl_2 Dry Cleaning Mechanism : Fe Removal Effects of Silicon Chlorides (SiCl_x)

R. Sugino,  Y. Okui,  M. Shigeno,  S. Ohkubo,  K. Takasaki,  T. Ito,  

[Date]1997/8/25
[Paper #]SDM97-88
Surface chemistry during Si Gas-Source Molecular Beam Epitaxy by surface-hydrogen-desorption measurements

Hideki Nakazawa,  Maki Suemitsu,  

[Date]1997/8/25
[Paper #]SDM97-89
Adsorption process of silane or disilane on Si(100):P

Y. Tsukidate,  H. Nakazawa,  M. Suemitsu,  

[Date]1997/8/25
[Paper #]SDM97-90
Comparison of metalorganic source gases for Al CVD process : DMAH v.s. DMEAA

Hideki Matsuhashi,  Chang-Hun Lee,  Kazuya Masu,  Kazuo Tsubouchi,  

[Date]1997/8/25
[Paper #]SDM97-91
[OTHERS]

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[Date]1997/8/25
[Paper #]