Electronics-Silicon Devices and Materials(Date:1996/12/06)

Presentation
表紙

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[Date]1996/12/6
[Paper #]
目次

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[Date]1996/12/6
[Paper #]
Properties of Ta2O5 Thin Films on Metal Electrodes

K. Kishiro,  N. Inoue,  S.C. Chen,  M. Yoshimaru,  

[Date]1996/12/6
[Paper #]SDM96-156
Low Temperature Growth of Bi_4Ti_3O_<12> Thin Films and its Properties

Masaki YAMAGUCHI,  Takao NAGATOMO,  0samu OMOTO,  

[Date]1996/12/6
[Paper #]SDM96-157
Temperature dependence of carrier recombination lifetime in Si wafers

H. TaJiri,  T. Itoh,  M. Ichimura,  E. Arai,  

[Date]1996/12/6
[Paper #]SDM96-158
Evaluation of silicon surface etched with CLF_3 gas

Tadashi Momma,  Yoshinori Ishizaki,  Yoji Saito,  

[Date]1996/12/6
[Paper #]SDM96-159
Impurity doping in polycrystalline Si by plasma enhanced CVD towards thin film solar cells

K. Kurobe,  H. Kohara,  T. Fuyuki,  H. Matsunami,  

[Date]1996/12/6
[Paper #]SDM96-160
Implanted-H induced embrittlement for delaminating of thin singlecrystalline silicon layers

Kenji Kajiyama,  Tomoaki Yoneda,  Morio Inoue,  Tohru Hara,  

[Date]1996/12/6
[Paper #]SDM96-161
Enhanced solid phase crystal growth of Si by Sn doping

Satoshi Kojima,  Yoji Saito,  

[Date]1996/12/6
[Paper #]SDM96-162
Effects of impurity doping in Poly-Si films using doped oxide and its application to devices

T. Komori,  W-F. Qu,  A. Tanaka,  A. Kitagawa,  M. Suzuki,  

[Date]1996/12/6
[Paper #]SDM96-163
The Molecular Dynamics Simulation of Boron Cluster Ion Implantation

T. Aoki,  N. Shimada,  D. Takeuchi,  J. Matsuo,  Z. Insepov,  I. Yamada,  

[Date]1996/12/6
[Paper #]SDM96-164
Formation of shallow N-type layers in As-implanted Si by hydrogen ECR plasma treatment

Kohuichi Hosokawa,  Kouichiro Terada,  Katsuhiro Yokota,  Masanori Watanabe,  shinobu Takagi,  Kiyohito Hirai,  Hiromichi Takano,  Masao Kumagai,  

[Date]1996/12/6
[Paper #]SDM96-165
Reduction of SIMOX Surface Roughness in High-Temperature H_2

Y. Kunii,  M. Nagase,  S. Nakashima,  K. Izumi,  

[Date]1996/12/6
[Paper #]SDM96-166
Retrogrowth of Oxidation Induced Stacking Faults in Thin Silicon-On-Insulator

Luis Felipe Giles,  Yasuo Kunii,  Katsutoshi Izumi,  

[Date]1996/12/6
[Paper #]SDM96-167
Study of STI formation using high pressure oxidation technology

M. Itoh,  M. Yamauchi,  K. Sawamura,  S. Koizumi,  Y. Nagatomo,  

[Date]1996/12/6
[Paper #]SDM96-168
Damascene Cu interconnection capped by TiWN layer

Tetsuo Fukada,  Yoshihiko Toyoda,  Takeshi Mori,  Makiko Hasegawa,  Noboru Mikami,  

[Date]1996/12/6
[Paper #]SDM96-169
Analyses of Corrosion Mechanism of AlCu Alloy Thin Films by Electrochemical Methods and Improvement of Corrosion Resistance by Surface Sulfuration Method.

Akemi Kawaguchi,  Minoru Kubo,  

[Date]1996/12/6
[Paper #]SDM96-170
In-situ heavy doping in selective epitaxial growth at low temperatures

Masami Nakata,  Akihiro Miyauchi,  Yousuke Inoue,  Takaya Suzuki,  

[Date]1996/12/6
[Paper #]SDM96-171
[OTHERS]

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[Date]1996/12/6
[Paper #]